| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS8449-G is a single N-Channel power MOSFET manufactured by On Semiconductor. This device utilizes MOSFET (Metal Oxide) technology and is designed for efficient power switching applications.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current rating of 7.6A at an ambient temperature of 25°C. The device features a low maximum on-resistance (Rds(on)) of 29mOhm, which is specified at a gate drive voltage of 10V and a drain current of 7.6A. The gate threshold voltage (Vgs(th)) has a maximum of 3V at a drain current of 250µA. For switching applications, the maximum gate charge (Qg) is 11nC at a gate-source voltage of 5V, and the input capacitance (Ciss) is 760pF at a drain-source voltage of 20V.
The FDS8449-G is offered in a standard 8-SOIC surface-mount package (0.154" width, 3.90mm width). It is rated for operation over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 1W at ambient temperature. The device is designed for surface mount assembly, making it suitable for compact and automated manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 7.6A at an ambient temperature of 25°C.
The maximum on-resistance (Rds(on)) is 29mOhm at a gate-source voltage of 10V and a drain current of 7.6A.
It is available in an 8-SOIC surface mount package (0.154" width, 3.90mm width).
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, though this data is unverified.