| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
880 pcs
|
880 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current Continuous (Nominal @ Q 2) | |
| Drain Current, Pulsed | |
| Drain Source On Resistance (Typical @ VGS=-10 V, ID=-3.4 A) | |
| Drain Source On Resistance (Typical @ VGS=-4.5 V, ID=-2.5 A) | |
| Drain Source On Resistance (Typical @ VGS=4.5 V, ID=3.2 A) | |
| Drain Source Voltage (Maximum @ Q 2) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Minimum/Typical/Maximum @ Vds=Vgs, Id=250 µA) | |
| Gate-Source Voltage (Maximum @ Q 1) | |
| Gate-Source Voltage (Maximum @ Q 2) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape & Reel Quantity | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs(th) (Max) @ Id |
The FDS8333C is a 30V N and P-Channel MOSFET array from On Semiconductor, fabricated using advanced PowerTrench technology. It features logic level gate drive, enabling direct interface with low-voltage control signals. The device offers low on-resistance: 80 mOhm for the N-channel at VGS=10V and 130 mOhm for the P-channel at VGS=-10V, with pulsed drain current capability up to 20A.
This MOSFET array is designed for low voltage and battery-powered applications where efficient power switching and minimal conduction losses are critical. The total gate charge is 6.6 nC at VGS=4.5V, and input capacitance is 282 pF, supporting fast switching performance. The device operates over a junction temperature range of -55°C to 150°C.
Packaged in an industry-standard 8-SOIC surface mount package, the FDS8333C is supplied on tape and reel with 2500 units per reel. The compact SO-8 footprint makes it suitable for space-constrained designs. Thermal resistance junction-to-ambient is 78°C/W and junction-to-case is 40°C/W.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.27 | $0.27 |
| 5,000+ | $0.24 | $0.24 |
| 7,500+ | $0.23 | $0.23 |
| 12,500+ | $0.22 | $0.22 |
| 17,500+ | $0.21 | $0.21 |
| 25,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel has a maximum drain-source voltage of 30 V, and the P-channel has a maximum of -30 V.
The FDS8333C is available in an 8-SOIC surface mount package (8-SOIC, 0.154" width).
The operating junction temperature range is -55°C to 150°C.
The FDS8333C is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The typical drain-source on-resistance for the N-channel at VGS=10V and ID=4.1A is 80 mOhm.
The gate threshold voltage for the P-channel is -1 V (minimum), -1.8 V (typical), and -3 V (maximum) at VDS=VGS and ID=-250 µA.