| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
890 pcs
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890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS7764A is an N-Channel MOSFET manufactured by onsemi, utilizing MOSFET (Metal Oxide) technology. It features a maximum drain-source breakdown voltage of 30 V and a continuous drain current rating of 15 A at Ta=25°C. The device offers a low drain-source on-resistance of 7.5 mOhm at Id=15A and Vgs=4.5V, making it suitable for efficient power switching applications.
Key electrical characteristics include a maximum gate charge of 40 nC at Vgs=4.5V and an input capacitance of 3451 pF at Vds=15V. The gate threshold voltage is 2 V at Id=250µA. The operating junction temperature range is -55°C to 150°C, allowing use in harsh environments.
The FDS7764A is housed in an 8-SOIC surface mount package (0.154", 3.90mm Width) and is designed for surface mount assembly. This compact package enables high-density PCB layouts. The part is suitable for a variety of power management and switching circuits where space and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 190+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C.
RoHS3 Compliant (unverified).
15 A at Ta=25°C.
40 nC at Vgs=4.5V.
3451 pF at Vds=15V.