FDS7066N3 The FDS7066N3 is a 30V N-Channel PowerTrench MOSFET from On Semiconductor, offering 23A continuous drain current and ultra-low Rds(on) of 5.5 mOhm at 10V.
Mfr Part #:

FDS7066N3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS7066N3 is a 30V N-Channel PowerTrench MOSFET from On Semiconductor, offering 23A continuous drain current and ultra-low Rds(on) of 5.5 mOhm at 10V.
✓ Total Stock: 2,000 pcs

FDS7066N3 Available from 1 distributor

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FDS7066N3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS7066N3 Description

Short technical summary and product information.

The FDS7066N3 is an N-Channel PowerTrench MOSFET designed for high-efficiency DC/DC converters. It delivers 23A continuous drain current at 30V with a typical drain-source on-resistance of 5.5 mOhm at VGS = 10V, making it ideal for low-side synchronous rectification.

 

Key electrical characteristics include a gate threshold voltage range of 1V to 3V, input capacitance of 4973 pF, and total gate charge of 43 nC to 69 nC at 5V. Switching speeds feature typical turn-on delay of 12 ns and turn-off delay of 85 ns at VDD = 15V.

 

The device is housed in an 8-SOIC surface mount package with a supplier device package of 8-SO. It operates over a junction temperature range of -55°C to 150°C and is optimized for power management in space-constrained applications.

FDS7066N3 Quick Information

Product Type: N-Channel MOSFET
Series: FDS7066N3
Canonical Name: FDS7066N3 30V N-Channel PowerTrench MOSFET
Subcategory: Single MOSFET

FDS7066N3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

FDS7066N3 Features

  • N-Channel PowerTrench MOSFET at 30V.
  • 23A continuous drain current rated.
  • Ultra-low Rds(on) of 5.5 mOhm typical.
  • Fast switching with 12 ns turn-on delay.
  • Surface mount 8-SOIC package.

FDS7066N3 Applications

  • Synchronous rectifier in DC/DC converters.
  • Low-side switching for power supplies.
  • High-efficiency power management circuits.
  • Battery charging and protection modules.
  • Server and telecom power systems.

FDS7066N3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDS7066N3?

The maximum drain-source voltage (VDSS) is 30 V.

What is the continuous drain current rating?

The continuous drain current is 23 A at Ta = 25°C.

What is the Rds(on) at VGS = 10V?

The typical Rds(on) is 5.2 mOhm with a maximum of 6.0 mOhm at VGS = 10V, ID = 23 A.

What package is the FDS7066N3 available in?

The device is available in an 8-SOIC surface mount package (0.154", 3.90mm width) with a supplier package designation of 8-SO.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The gate threshold voltage (Vgs(th)) ranges from 1 V to 3 V at ID = 250 µA.

What is the maximum power dissipation?

Maximum power dissipation is 3.0 W at Ta = 25°C (Note 1a).

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