FDS7066ASN3 MOSFET N-CH 30V 19A 8SO. Low on-resistance of 4.8 mΩ typical at 10V with integrated Schottky diode.
Mfr Part #:

FDS7066ASN3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
MOSFET N-CH 30V 19A 8SO. Low on-resistance of 4.8 mΩ typical at 10V with integrated Schottky diode.
✓ Total Stock: 2,375 pcs
$ Price Range: $1.89

FDS7066ASN3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,375 pcs
2375 pcs On Request 1 On Request On Request On Request On Request On Request

FDS7066ASN3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS7066ASN3 Description

Short technical summary and product information.

The FDS7066ASN3 is a 30V N-Channel PowerTrench SyncFET MOSFET from On Semiconductor, designed for synchronous DC-DC converter applications. It features a low drain-source on-resistance of 4.8 mΩ typical at VGS=10V and 6.0 mΩ at VGS=4.5V, enabling high efficiency in power conversion. The device integrates a monolithic Schottky diode using Fairchild’s SyncFET technology, reducing component count and improving performance as a low-side switch.

 

Key electrical characteristics include a drain-source breakdown voltage of 30V minimum, continuous drain current of 19A at 25°C ambient, and a total gate charge of 62 nC maximum at VGS=10V. The MOSFET offers fast switching with typical turn-on delay of 10 ns and turn-off delay of 44 ns. It is rated for operating junction temperatures from -55°C to 150°C.

 

The FDS7066ASN3 is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) with enhanced thermal performance. It is supplied in tape and reel packaging with 2500 units per reel. Typical applications include low-side switching in synchronous rectifiers, DC/DC converters, and power management circuits.

FDS7066ASN3 Quick Information

Product Type: MOSFET
Canonical Name: FDS7066ASN3 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDS7066ASN3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS7066ASN3 Estimated Pricing

Qty Low High
159+ $1.89 $1.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS7066ASN3 Features

  • 30V drain-source breakdown voltage.
  • 19A continuous drain current rating.
  • Low on-resistance of 4.8 mΩ at 10V.
  • Integrated Schottky diode for synchronous rectification.
  • Surface mount 8-SOIC package.

FDS7066ASN3 Applications

  • Low-side switch in synchronous DC/DC converters.
  • Power management in portable electronics.
  • DC-DC conversion for telecom equipment.
  • High-efficiency voltage regulation circuits.

FDS7066ASN3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FDS7066ASN3?

30 V minimum.

What is the continuous drain current rating?

19 A at 25°C ambient (Note 1a).

What is the typical on-resistance at 10V gate drive?

5 mΩ typical (4 mΩ min, 6 mΩ max).

What is the operating junction temperature range?

-55°C to 150°C.

What is the package type?

8-SOIC (0.154", 3.90mm Width) surface mount.

Is the device RoHS compliant?

RoHS3 Compliant per existing data, but unverified.

What is the typical gate charge?

62 nC maximum at VGS=10V.

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