| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,750 pcs
|
7750 pcs | On Request | 1 | On Request | On Request | 0612+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low side synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Key specifications include a drain-source voltage rating of 30V, continuous drain current of 16A, and on-resistance of 7.5mΩ (maximum) at VGS=4.5V. The device features a typical gate charge of 30nC, enabling fast switching with turn-on delay of 17ns and fall time of 26ns. Input capacitance is 3355pF typical.
The MOSFET is housed in a surface-mount 8-SOIC package with enhanced thermal performance, offering a junction-to-ambient thermal resistance of 40°C/W. Operating junction temperature ranges from -55°C to 150°C. It is suitable for synchronous rectifier and DC/DC converter applications.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.59 | $0.59 |
| 5,000+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
6.2mΩ typical, 7.5mΩ maximum at 25°C with 16A drain current.
16A at 25°C ambient temperature.
0.8V minimum, 1.2V typical, 2V maximum at VDS=VGS, ID=250µA.