| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,610 pcs
|
3610 pcs | On Request | 1 | On Request | On Request | 0923+ | On Request | On Request | |
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Avalanche Current | |
| Drain-Source Avalanche Energy | |
| Drain-Source Breakdown Voltage | |
| Drain-Source On-Resistance (Typical/Maximum @ VGS=4.5 V, ID=16 A) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| On-State Drain Current | |
| Operating Temperature | |
| Output Capacitance | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reel Size | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current | |
| drain_source_on_resistance (Typical/Maximum @ Vgs = 10 V, Id = 19 A, Tj = 125 °C) | |
| gate_source_leakage (Maximum @ VGS = ±20 V, VDS = 0 V) |
The FDS7060N7 is a 30V N-Channel PowerTrench MOSFET from ON Semiconductor optimized for DC/DC converter efficiency. It features a continuous drain current of 19A at 25°C and a pulsed current capability of 60A. The on-resistance is extremely low: 5mOhm typical at 10V gate drive and 7mOhm maximum at 4.5V. Gate charge is 35nC typical, enabling fast switching with low losses. The device is avalanche rated at 360mJ.
This MOSFET is designed for synchronous rectifier circuits and low-side switching in power supplies. It is housed in a FLMP SO-8 surface-mount package (8-SOIC), which provides enhanced thermal performance with a junction-to-case thermal resistance of 0.5°C/W. The operating junction temperature range is -55°C to 150°C.
Electrical characteristics include a typical forward transconductance of 78S, input capacitance of 3274pF, and output capacitance of 721pF. Switching times are fast with typical turn-on delay of 11ns and turn-off delay of 60ns. The device is offered in tape and reel packaging with 2500 units per reel.
| Qty | Low | High |
|---|---|---|
| 164+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The continuous drain current is 19 A at 25°C.
The typical on-resistance is 5 mOhm at Vgs = 10 V, Id = 19 A.
The operating junction temperature range is -55°C to 150°C.
The FDS7060N7 is available in an 8-SOIC FLMP SO-8 package.
The FDS7060N7 is listed as RoHS3 compliant, but this status is unverified.
The typical gate charge is 35 nC at Vgs = 5 V.