| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,792 pcs
|
5792 pcs | On Request | 1 | On Request | On Request | 1051+ | On Request | On Request | |
|
1,875 pcs
|
1875 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,393 pcs
|
1393 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6990AS is a dual N-channel MOSFET (Metal Oxide) designed for general-purpose switching applications. It features a maximum drain to source voltage of 30V and a continuous drain current of 7.5A. The drain-source on-resistance is 22 mOhm max at 7.5A and 10V gate drive, with a maximum gate charge of 14 nC at 5V. The input capacitance is 550 pF at 15V drain-source voltage. The device operates over a junction temperature range of -55°C to 150°C. It is surface mountable in an 8-SOIC package (0.154", 3.90mm width). The logic level gate feature allows direct drive from low-voltage logic. This MOSFET is suitable for power management and load switching in portable and battery-powered devices.
The maximum drain-source voltage is 30V.
The continuous drain current rating is 7.5A.
The maximum on-resistance is 22 mOhm at 7.5A and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
The device is housed in an 8-SOIC (0.154", 3.90mm width) surface mount package.
It is listed as RoHS3 compliant, but this status is unverified.
The maximum gate charge is 14 nC at 5V gate voltage.