FDS6990AS The FDS6990AS is a dual N-channel MOSFET from On Semiconductor with a maximum drain-source voltage of 30V and continuous drain current of 7.5A. It features a logic level gate and is surface mount in an 8-SOIC package.
Mfr Part #:

FDS6990AS

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6990AS is a dual N-channel MOSFET from On Semiconductor with a maximum drain-source voltage of 30V and continuous drain current of 7.5A. It features a logic level gate and is surface mount in an 8-SOIC package.
✓ Total Stock: 9,060 pcs

FDS6990AS Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,792 pcs
5792 pcs On Request 1 On Request On Request 1051+ On Request On Request
Non-Authorised Inventory information
1,875 pcs
1875 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,393 pcs
1393 pcs On Request 1 On Request On Request On Request On Request On Request

FDS6990AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6990AS Description

Short technical summary and product information.

The FDS6990AS is a dual N-channel MOSFET (Metal Oxide) designed for general-purpose switching applications. It features a maximum drain to source voltage of 30V and a continuous drain current of 7.5A. The drain-source on-resistance is 22 mOhm max at 7.5A and 10V gate drive, with a maximum gate charge of 14 nC at 5V. The input capacitance is 550 pF at 15V drain-source voltage. The device operates over a junction temperature range of -55°C to 150°C. It is surface mountable in an 8-SOIC package (0.154", 3.90mm width). The logic level gate feature allows direct drive from low-voltage logic. This MOSFET is suitable for power management and load switching in portable and battery-powered devices.

FDS6990AS Quick Information

Product Type: MOSFET Array
Series: PowerTrench SyncFET
Canonical Name: MOSFET 2N-CH 30V 7.5A 8SOIC
Subcategory: Dual N-Channel MOSFET

FDS6990AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDS6990AS Features

  • Dual N-channel MOSFET configuration.
  • Maximum drain-source voltage 30V.
  • Continuous drain current 7.5A.
  • Low on-resistance of 22 mOhm.
  • Logic level gate for easy drive.

FDS6990AS Applications

  • Power management in portable devices.
  • Load switching for DC-DC converters.
  • Motor control for low-voltage systems.
  • Battery protection circuits.

FDS6990AS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS6990AS?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current rating is 7.5A.

What is the on-resistance of the MOSFET?

The maximum on-resistance is 22 mOhm at 7.5A and 10V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FDS6990AS come in?

The device is housed in an 8-SOIC (0.154", 3.90mm width) surface mount package.

Is the FDS6990AS RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the gate charge of the FDS6990AS?

The maximum gate charge is 14 nC at 5V gate voltage.

Home
Account

Categories