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FDS6990A The FDS6990A is a dual N-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage, 7.5A drain current, and 18mOhm on-resistance in an 8-SOIC package.
Mfr Part #:

FDS6990A

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6990A is a dual N-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage, 7.5A drain current, and 18mOhm on-resistance in an 8-SOIC package.
✓ Total Stock: 13,916 pcs

FDS6990A Available from 4 distributors

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FDS6990A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDS6990A Description

Short technical summary and product information.

The FDS6990A is a dual N-Channel MOSFET from ON Semiconductor, originally part of the Fairchild Semiconductor portfolio. It integrates two logic level gate MOSFETs in an 8-SOIC surface-mount package.

 

Key electrical specifications include a maximum drain-source voltage of 30V, a continuous drain current of 7.5A per channel, and a low on-resistance of 18mOhm at Vgs=10V and Id=7.5A. The logic level gate enables full enhancement with 5V gate drive, reducing drive circuitry complexity.

 

Dynamic characteristics include a maximum gate charge of 17nC at Vgs=5V and an input capacitance of 1235pF at Vds=15V. Maximum power dissipation is 900mW, and the operating junction temperature range is -55°C to 150°C. The dual-channel configuration in a compact 8-SOIC package saves board space in high-density designs.

FDS6990A Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: FDS6990A Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

FDS6990A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 – Unlimited
REACH Status: REACH Unaffected

FDS6990A Features

  • Dual N-Channel MOSFET in 8-SOIC package.
  • 30V drain-source voltage and 7.5A current.
  • 18mOhm on-resistance with logic level gate.
  • 17nC gate charge and 1235pF capacitance.
  • 900mW power dissipation, -55°C to 150°C range.

FDS6990A Applications

  • Ideal for low-voltage power management circuits.
  • Used in load switching and DC-DC converters.
  • Suitable for battery-powered portable devices.
  • Dual channel saves board space in compact designs.

FDS6990A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS6990A?

30V.

What is the package type for the FDS6990A?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range of the FDS6990A?

-55°C to 150°C (junction).

Is the FDS6990A RoHS compliant?

It is listed as RoHS3 compliant, though the compliance data is unverified.

What is the gate charge of the FDS6990A?

Maximum 17nC at Vgs=5V.

What is the on-resistance of the FDS6990A?

18mOhm maximum at Id=7.5A, Vgs=10V.

Does the FDS6990A have a logic level gate?

Yes, it features a logic level gate for low-voltage drive.

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