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FDS6986S The FDS6986S is a dual N-Channel PowerTrench MOSFET in an SO-8 package. It features a 30V drain-source breakdown voltage and continuous drain current up to 7.9A per channel.
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FDS6986S

Available from 1 distributors
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The FDS6986S is a dual N-Channel PowerTrench MOSFET in an SO-8 package. It features a 30V drain-source breakdown voltage and continuous drain current up to 7.9A per channel.
✓ Total Stock: 2,500 pcs
$ Price Range: $1.58

FDS6986S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request 03+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS6986S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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FDS6986S Description

Short technical summary and product information.

The FDS6986S is a dual N-Channel PowerTrench MOSFET designed for efficient power management. Each MOSFET has a minimum drain-source breakdown voltage of 30V and a maximum continuous drain current of 7.9A (Q2) and 6.5A (Q1). The device offers low on-resistance, with typical RDS(on) of 20mΩ for Q2 at VGS = 10V and 29mΩ for Q1 at VGS = 10V.

 

The gate threshold voltage ranges from 1V to 2.4V for Q2 and 1V to 1.6V for Q1, enabling logic-level drive compatibility. The device is housed in an industry-standard SO-8 package and operates over a junction temperature range of -55°C to +150°C. Typical gate charge is 6.5nC for Q1, supporting fast switching.

FDS6986S Quick Information

Product Type: Dual N-Channel MOSFET Array
Series: FDS
Canonical Name: FDS6986S Dual N-Channel PowerTrench MOSFET
Subcategory: Dual N-Channel

FDS6986S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS6986S Estimated Pricing

Qty Low High
1+ $1.58 $1.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6986S Features

  • Dual N-Channel PowerTrench MOSFET array.
  • 30V drain-source breakdown voltage rating.
  • 7.9A continuous drain current per channel.
  • Low typical on-resistance of 20mΩ at 10V.
  • SO-8 surface mount package.

FDS6986S Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management for portable devices.
  • Ideal for load switching applications.
  • Applicable in battery protection circuits.

FDS6986S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FDS6986S?

The minimum drain-source breakdown voltage is 30V for both MOSFETs.

What is the maximum continuous drain current for each MOSFET?

Q2 can handle up to 7.9A continuous, and Q1 up to 6.5A continuous.

What is the typical on-resistance of the FDS6986S?

Typical RDS(on) is 20mΩ for Q2 and 29mΩ for Q1 at VGS = 10V.

What is the operating junction temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

What package is the FDS6986S available in?

The FDS6986S is supplied in an SO-8 package.

What is the gate threshold voltage for the FDS6986S?

The gate threshold voltage ranges from 1V to 2.4V for Q2 and 1V to 1.6V for Q1.

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