| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,607 pcs
|
1607 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,532 pcs
|
1532 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6986S is a dual N-Channel power MOSFET (metal oxide) from onsemi, designed for efficient switching in space-constrained applications. It offers a drain-source voltage (Vdss) of 30V and continuous drain current ratings of 6.5A for channel 1 and 7.9A for channel 2 at 25°C. The on-resistance is 29 mΩ (max) for channel 1 at 6.5A/10V and 20 mΩ (max) for channel 2 at 7.9A/10V, ensuring low conduction losses.
The device supports logic level gate drive, with maximum gate threshold voltage of 3V for both channels. Gate charge is 9 nC (max) for channel 1 and 16 nC (max) for channel 2 at 5V, and input capacitance is 695 pF (max) and 1233 pF (max) respectively at Vds=10V. Maximum power dissipation is 900 mW at TA=25°C.
The FDS6986S is packaged in an 8-SOIC (0.154", 3.90mm width) surface-mount package and can operate over a junction temperature range of -55°C to 150°C. It is suitable for applications requiring two independent MOSFETs in a single package, such as DC-DC converters, load switches, and power management circuits.
| Qty | Low | High |
|---|---|---|
| 413+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
Channel 1 is rated for 6.5A and channel 2 for 7.9A at 25°C.
It is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
The junction temperature range is -55°C to 150°C.
Yes, the FET feature is logic level gate, with maximum gate threshold voltage of 3V.
The part is listed as RoHS3 compliant, but this status is unverified.