FDS6986AS The FDS6986AS is a dual N-Channel PowerTrench SyncFET MOSFET array from onsemi. It features a 30V drain-source voltage, 6.5A (Q1) and 7.9A (Q2) continuous drain current, and logic level gate drive.
Mfr Part #:

FDS6986AS

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6986AS is a dual N-Channel PowerTrench SyncFET MOSFET array from onsemi. It features a 30V drain-source voltage, 6.5A (Q1) and 7.9A (Q2) continuous drain current, and logic level gate drive.
✓ Total Stock: 3,500 pcs
$ Price Range: $0.32

FDS6986AS Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDS6986AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs(th) (Max) @ Id

FDS6986AS Description

Short technical summary and product information.

The FDS6986AS from onsemi is a dual N-Channel PowerTrench SyncFET MOSFET array designed for synchronous DC-DC power supplies in notebook computers and other battery-powered electronics. It integrates two 30V logic level MOSFETs in a single 8-SOIC package.

 

The high-side switch (Q1) is optimized for low switching losses with a typical gate charge of 10 nC and a maximum on-resistance of 29 mOhm at Vgs=10V. The low-side switch (Q2) is optimized for low conduction losses with a maximum on-resistance of 20 mOhm at Vgs=10V and includes an integrated Schottky diode using onsemi's SyncFET technology.

 

The device is surface mount in an 8-SOIC (0.154", 3.90mm Width) package and operates over a junction temperature range of -55°C to +150°C. It is RoHS3 compliant and has an MSL of 1 (unlimited).

FDS6986AS Quick Information

Product Type: MOSFET Array
Canonical Name: FDS6986AS Dual N-Channel PowerTrench SyncFET MOSFET Array
Subcategory: Dual N-Channel MOSFET

FDS6986AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6986AS Estimated Pricing

Qty Low High
2,500+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6986AS Features

  • Dual N-Channel MOSFET in 8-SOIC package.
  • 30V drain-source voltage rating.
  • 6.5A continuous drain current for Q1.
  • 7.9A continuous drain current for Q2.
  • Logic level gate drive capability.

FDS6986AS Applications

  • Synchronous DC-DC power supplies for notebooks.
  • Battery power management in portable devices.
  • Load switching in low voltage systems.
  • Power conversion in embedded electronics.

FDS6986AS FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS6986AS?

The drain-source voltage (Vdss) is 30V for both Q1 and Q2.

What is the continuous drain current for each MOSFET?

Q1 has a maximum continuous drain current of 6.5A, and Q2 has a maximum of 7.9A.

What package is the FDS6986AS available in?

The FDS6986AS is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDS6986AS RoHS compliant?

The FDS6986AS is listed as RoHS3 Compliant.

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