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FDS6982S The FDS6982S is a dual N-channel PowerTrench MOSFET from On Semiconductor, designed for synchronous DC-DC converters. It features a high-side switch (Q1) optimized for low switching losses and a low-side switch (Q2) with integrated SyncFET Schottky diode for reduced conduction losses.
Mfr Part #:

FDS6982S

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6982S is a dual N-channel PowerTrench MOSFET from On Semiconductor, designed for synchronous DC-DC converters. It features a high-side switch (Q1) optimized for low switching losses and a low-side switch (Q2) with integrated SyncFET Schottky diode for reduced conduction losses.
✓ Total Stock: 227,987 pcs

FDS6982S Available from 4 distributors

✓ Authorised
✓ Non-Authorised
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FDS6982S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs(th) (Max) @ Id
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FDS6982S Description

Short technical summary and product information.

The FDS6982S is designed to replace two single SO-8 MOSFETs and a Schottky diode in synchronous DC:DC power supplies for notebook computers and other battery powered electronic devices. It contains two 30V N-channel logic level PowerTrench MOSFETs. The high-side switch (Q1) is optimized for low switching losses with a low gate charge (8.5 nC typical) and a maximum on-resistance of 28 mOhm at Vgs=10V. The low-side switch (Q2) is optimized for low conduction losses with an integrated SyncFET Schottky body diode and a maximum on-resistance of 16 mOhm at Vgs=10V. Continuous drain current is 6.3A for Q1 and 8.6A for Q2. The device features a logic level gate, enabling drive from 5V logic. Input capacitance is 2040 pF maximum at Vds=10V. The MOSFET is housed in an 8-SOIC surface mount package with an operating junction temperature range of -55°C to 150°C. Power dissipation for single operation is 0.9W (Note 1c). Tape and reel packaging with 2500 units per reel.

FDS6982S Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDS6982S Dual N-Channel PowerTrench SyncFET MOSFET
Subcategory: Dual N-Channel MOSFET Array

FDS6982S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6982S Features

  • Dual N-channel MOSFET in SOIC-8 package.
  • 30V drain-source voltage rating.
  • 6.3A continuous drain current (Q1).
  • 8.6A continuous drain current (Q2).
  • Low on-resistance: 28mOhm (Q1) and 16mOhm (Q2).

FDS6982S Applications

  • Synchronous DC-DC converters for notebook computers.
  • Battery powered electronic devices.
  • Power supply for peripheral voltages.
  • High-side and low-side switch applications.

FDS6982S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What package is the FDS6982S available in?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDS6982S RoHS compliant?

RoHS3 compliant (unverified).

What is the continuous drain current for each MOSFET?

Q1: 6.3A, Q2: 8.6A.

What is the on-resistance?

Q1: 28mOhm max at Vgs=10V, Q2: 16mOhm max at Vgs=10V.

What is the gate charge?

12nC max at Vgs=5V.

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