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FDS6982AS FDS6982AS is a dual N-channel MOSFET from On Semiconductor with 30V drain-source breakdown voltage, 6.3A and 8.6A continuous drain currents, and 28mOhm max on-resistance. It features a logic-level gate and is surface mounted in an 8-SOIC package.
Mfr Part #:

FDS6982AS

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS6982AS is a dual N-channel MOSFET from On Semiconductor with 30V drain-source breakdown voltage, 6.3A and 8.6A continuous drain currents, and 28mOhm max on-resistance. It features a logic-level gate and is surface mounted in an 8-SOIC package.
✓ Total Stock: 8,313 pcs

FDS6982AS Available from 5 distributors

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✓ Non-Authorised
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FDS6982AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDS6982AS Description

Short technical summary and product information.

The FDS6982AS is a dual N-channel MOSFET designed by On Semiconductor. It features a drain-source breakdown voltage of 30V, with continuous drain currents of 6.3A for Q1 and 8.6A for Q2. The maximum on-resistance is 28mOhm at a gate-source voltage of 10V and drain current of 6.3A. The device also offers a maximum gate charge of 15nC at Vgs=10V and input capacitance of 610pF at Vds=10V. The gate threshold voltage is 3V max at 250µA. It incorporates a logic-level gate feature, making it suitable for low-voltage control circuits. The MOSFET is housed in an 8-SOIC surface-mount package (0.154\" width, 3.90mm width) and operates over a junction temperature range of -55°C to +150°C with a maximum power dissipation of 900mW. Its dual-channel configuration in a compact package enables efficient space-saving designs in power management and switching applications.

FDS6982AS Quick Information

Product Type: MOSFET Array
Series: PowerTrench SyncFET
Canonical Name: FDS6982AS MOSFET 2 N-Channel (Dual) 30V 6.3A/8.6A 8-SOIC Surface Mount
Subcategory: Dual N-Channel MOSFET

FDS6982AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDS6982AS Features

  • Dual N-channel MOSFET in one package.
  • 30V drain-source breakdown voltage.
  • 6.3A and 8.6A continuous drain currents.
  • 28mOhm low on-resistance.
  • Logic-level gate for low voltage drive.

FDS6982AS Applications

  • Used in power management circuits.
  • Ideal for load switching applications.
  • Suitable for DC-DC converter designs.
  • Works in battery-powered devices.

FDS6982AS FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the FDS6982AS?

The drain-source breakdown voltage is 30V.

What package does the FDS6982AS come in?

The FDS6982AS is available in an 8-SOIC (0.154\", 3.90mm Width) surface mount package.

What is the operating temperature range of the FDS6982AS?

The operating temperature range is -55°C to 150°C (junction).

Is the FDS6982AS RoHS compliant?

RoHS3 compliant (unverified).

What is the on-resistance of the FDS6982AS?

The maximum on-resistance is 28mOhm at Id=6.3A and Vgs=10V.

Does the FDS6982AS have logic-level gate?

Yes, the FET feature is logic level gate.

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