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FDS6982 FDS6982 is a dual N-channel logic level power MOSFET from On Semiconductor. It features 30V drain-source voltage, 8.6A continuous current, and low on-resistance down to 15mΩ.
Mfr Part #:

FDS6982

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS6982 is a dual N-channel logic level power MOSFET from On Semiconductor. It features 30V drain-source voltage, 8.6A continuous current, and low on-resistance down to 15mΩ.
Total Stock: 3,984 pcs
$ Price Range: $0.43 - $0.48

FDS6982 Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,333 pcs
2333 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,272 pcs
1272 pcs On Request 1 On Request On Request N/A On Request On Request
Non-Authorised Inventory information
379 pcs
379 pcs On Request 1 On Request On Request 17+ On Request On Request

FDS6982 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Source On Resistance (Maximum @ VGS = 10 V, ID = 6.3 A)
Drain Source On Resistance (Maximum @ VGS = 10 V, ID = 8.6 A)
Drain Source On Resistance (Maximum @ VGS = 4.5 V, ID = 5.6 A)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation (@ Dual Operation)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6982 Description

Short technical summary and product information.

The FDS6982 is a dual N-channel logic level power MOSFET from On Semiconductor, designed for synchronous DC-DC converters in battery-powered devices such as notebook computers. It integrates two optimized transistors: Q1 (high-side) with low switching losses and Q2 (low-side) with low conduction losses. Q2 delivers 8.6A continuous drain current with a maximum on-resistance of 15mΩ at 10V, while Q1 provides 6.3A with 28mΩ at 10V. Both transistors support logic level gate drive (4.5V).

 

Key specifications include a drain-source voltage of 30V, gate charge of 12nC, input capacitance of 760pF, and a maximum gate threshold voltage of 3V. The device utilizes high-performance trench technology for extremely low RDS(ON) and fast switching speed. The power dissipation is 2W for dual operation, 1.6W for Q2 single, and 0.9W for Q1 single.

 

The FDS6982 is housed in an 8-SOIC surface mount package (0.154 inch width, 3.90mm) with an operating junction temperature range of -55°C to 150°C. It is supplied in tape and reel packaging with 2500 units per reel.

FDS6982 Quick Information

Product Type: Dual N-Channel Power MOSFET
Canonical Name: FDS6982 Dual N-Channel MOSFET
Subcategory: Arrays

FDS6982 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6982 Estimated Pricing

Qty Low High
2,500+ $0.48 $0.48
5,000+ $0.45 $0.45
7,500+ $0.43 $0.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6982 Features

  • Dual N-channel logic level power MOSFET.
  • 30V drain-source voltage rating.
  • 8.6A continuous drain current (Q2).
  • Low on-resistance: 15mΩ at 10V.
  • High performance trench technology.

FDS6982 Applications

  • Battery powered synchronous DC-DC converters.
  • Embedded DC-DC conversion.
  • Notebook computer power supplies.
  • Replaces two single SO-8 MOSFETs.

FDS6982 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS6982?

30V.

What is the package type of the FDS6982?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDS6982 RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum continuous drain current?

8.6A for Q2, 6.3A for Q1.

What is the on-resistance at 10V?

15mΩ max for Q2, 28mΩ max for Q1.

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