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FDS6975 The FDS6975 is a dual P-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage, 6A continuous drain current, and a low on-resistance of 32 mOhm at 10V gate drive, packaged in an 8-SOIC surface mount package.
Mfr Part #:

FDS6975

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6975 is a dual P-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage, 6A continuous drain current, and a low on-resistance of 32 mOhm at 10V gate drive, packaged in an 8-SOIC surface mount package.
Total Stock: 9,423 pcs
$ Price Range: $0.88 - $2.06

FDS6975 Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
723 pcs
723 pcs On Request 1 On Request On Request 12+ On Request On Request

FDS6975 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6975 Description

Short technical summary and product information.

The FDS6975 is a dual P-Channel MOSFET from ON Semiconductor designed for high-side load switching and power management applications. It features a maximum drain-source voltage of 30 V and a continuous drain current of 6 A. The device offers a low on-resistance of 32 mOhm at 6 A and 10 V gate drive, minimizing conduction losses. With a logic level gate threshold, it can be driven directly by low-voltage logic.

 

The MOSFET has a gate charge of 20 nC at 5 V and an input capacitance of 1540 pF at 15 V, enabling efficient switching in moderate frequency applications. The maximum power dissipation is 900 mW, and the junction operating temperature range is -55°C to 150°C, suitable for industrial environments.

 

Packaged in an 8-SOIC (0.154", 3.90 mm width) surface mount package, the FDS6975 is ideal for compact PCB layouts. The device is listed as RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited).

FDS6975 Quick Information

Product Type: Dual P-Channel MOSFET Array
Canonical Name: FDS6975 Dual P-Channel MOSFET, 30V, 6A, 8-SOIC
Subcategory: Dual P-Channel MOSFET

FDS6975 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6975 Estimated Pricing

Qty Low High
1+ $2.06 $2.06
10+ $1.31 $1.31
100+ $0.88 $0.88
2,500+ $0.88 $0.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6975 Features

  • Dual P-Channel MOSFET configuration.
  • Maximum 30V drain-source voltage.
  • Continuous drain current of 6A.
  • Low on-resistance of 32 mOhm.
  • Logic level gate drive capability.

FDS6975 Applications

  • Ideal for high-side load switching.
  • Used in battery management circuits.
  • Suitable for power management in portable devices.
  • Can be used in DC-DC converter applications.

FDS6975 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS6975?

30V.

What is the package type of the FDS6975?

8-SOIC (0.154", 3.90mm Width) surface mount.

What is the operating temperature range of the FDS6975?

-55°C to 150°C (junction).

Is the FDS6975 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the configuration of the FDS6975?

Dual P-Channel MOSFET.

What is the maximum continuous drain current of the FDS6975?

6 A.

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