FDS6961A Dual N-channel logic level MOSFET from On Semiconductor. 30V drain-source voltage, 3.5A continuous drain current, 90mΩ on-resistance at 10V gate drive.
Mfr Part #:

FDS6961A

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel logic level MOSFET from On Semiconductor. 30V drain-source voltage, 3.5A continuous drain current, 90mΩ on-resistance at 10V gate drive.
✓ Total Stock: 12,180 pcs

FDS6961A Available from 3 distributors

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FDS6961A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6961A Description

Short technical summary and product information.

The FDS6961A is a dual N-channel logic level MOSFET from On Semiconductor, originally designed by Fairchild Semiconductor using advanced PowerTrench technology. This device integrates two independent N-channel MOSFETs in a single 8-SOIC package, making it suitable for space-constrained designs requiring multiple switching elements.

 

Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current rating of 3.5A. The on-resistance is typically 76mΩ and guaranteed at 90mΩ maximum with a 10V gate drive, and 140mΩ maximum with a 4.5V gate drive, enabling low-voltage logic level operation. The device features a low typical gate charge of 2.1nC for efficient switching performance.

 

The MOSFET is surface mount packaged in an 8-SOIC (0.154", 3.90mm Width) case, with a maximum power dissipation of 2W for single operation. It operates over a junction temperature range of -55°C to 150°C. The logic level gate feature allows direct drive from 3.3V or 5V logic circuits.

FDS6961A Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDS6961A Dual N-Channel Logic Level PowerTrench MOSFET
Subcategory: Dual N-Channel

FDS6961A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6961A Features

  • Dual N-channel MOSFET in 8-SOIC package.
  • 30V maximum drain-source voltage rating.
  • 3.5A continuous drain current capability.
  • 90mΩ on-resistance at 10V gate drive.
  • Logic level gate for 3.3V/5V drive.

FDS6961A Applications

  • Suitable for low voltage battery powered circuits.
  • Used in power management and load switching.
  • Ideal for DC-DC converter designs.
  • Applicable in motor control applications.

FDS6961A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS6961A?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current is 3.5A.

What is the on-resistance of the FDS6961A?

The maximum on-resistance is 90mΩ at VGS=10V and ID=3.5A, and 140mΩ at VGS=4.5V and ID=2.8A.

What package is the FDS6961A available in?

The FDS6961A is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDS6961A a logic level MOSFET?

Yes, the FDS6961A has a logic level gate feature, allowing it to be driven by low voltage logic signals.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at ID=250µA, with a typical value of 1.8V.

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