| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
376,667 pcs
|
376667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,594 pcs
|
4594 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,449 pcs
|
2449 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,333 pcs
|
2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
119 pcs
|
119 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6912A is a dual N-Channel MOSFET manufactured by On Semiconductor, designed for low voltage and battery-powered applications where low in-line power loss and fast switching are required. It utilizes high performance trench technology to achieve extremely low on-resistance. The device is rated for a drain-source voltage of 30V and a continuous drain current of 6A, with a pulsed current capability of 20A. The maximum drain-source on-resistance is 28mΩ at Vgs=10V and Id=6A, and 35mΩ at Vgs=4.5V and Id=5A. The gate threshold voltage is 1.9V typical and 3V maximum at Id=250µA. The total gate charge is 8.1nC maximum at Vgs=5V, and input capacitance is 575pF maximum at Vds=15V. Switching speeds are characterized with typical turn-on delay of 8ns and turn-off delay of 23ns. The device includes a logic level gate feature, enabling direct drive from low voltage logic. The MOSFET is housed in an 8-SOIC surface mount package, with a junction-to-ambient thermal resistance of 78°C/W and a junction-to-case thermal resistance of 40°C/W. It is suitable for a variety of applications including power management, DC-DC converters, and load switching in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.76 | $0.76 |
| 10+ | $0.47 | $0.47 |
| 50+ | $0.35 | $0.35 |
| 100+ | $0.30 | $0.30 |
| 500+ | $0.23 | $0.23 |
| 3,000+ | $0.18 | $0.18 |
| 9,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The continuous drain current is 6A.
The maximum on-resistance is 28mΩ at Vgs=10V, Id=6A, and 35mΩ at Vgs=4.5V, Id=5A.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-SOIC package (8-SOIC, 0.154" width, 3.90mm width).
The part is listed as RoHS3 compliant, but this is unverified from the source.
The gate threshold voltage is 1.9V typical and 3V maximum at Id=250µA.