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FDS6912 FDS6912 is a dual N-Channel MOSFET from ON Semiconductor, rated for 30V drain-source voltage and 6A drain current. It comes in an 8-SOIC surface mount package with logic level gate drive.
Mfr Part #:

FDS6912

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS6912 is a dual N-Channel MOSFET from ON Semiconductor, rated for 30V drain-source voltage and 6A drain current. It comes in an 8-SOIC surface mount package with logic level gate drive.
Total Stock: 5,194 pcs
$ Price Range: $1.33

FDS6912 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,854 pcs
4854 pcs On Request 1 On Request On Request 0606+ On Request On Request
Non-Authorised Inventory information
340 pcs
340 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

FDS6912 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6912 Description

Short technical summary and product information.

The FDS6912 is a dual N-Channel MOSFET manufactured by ON Semiconductor. It is designed for surface mount assembly in an 8-SOIC package. The device features a drain-source voltage rating of 30V and a continuous drain current of 6A. Power dissipation is rated at 900mW. The MOSFET incorporates logic level gate drive, allowing direct interfacing with low-voltage control logic. On-resistance is specified at 28mOhm maximum at a gate-source voltage of 10V and drain current of 6A. Gate charge is 10nC maximum at Vgs=5V, and input capacitance is 740pF maximum at Vds=15V. The maximum gate threshold voltage is 3V at a drain current of 250µA. The device operates over a junction temperature range of -55°C to 150°C.

 

The 8-SOIC package provides a compact footprint for space-constrained designs. The dual N-Channel configuration is useful for applications requiring two independent MOSFETs in a single package, such as synchronous buck converters or H-bridge circuits.

FDS6912 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: FDS6912 Dual N-Channel MOSFET, 30V, 6A
Subcategory: Dual N-Channel MOSFET Array

FDS6912 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6912 Estimated Pricing

Qty Low High
226+ $1.33 $1.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6912 Features

  • Dual N-Channel MOSFET in 8-SOIC package.
  • 30V drain-source voltage rating.
  • 6A continuous drain current.
  • Logic level gate drive capability.
  • 28mOhm on-resistance at 10V gate drive.

FDS6912 Applications

  • Power management in portable devices.
  • Load switching for low-voltage rails.
  • DC-DC converter synchronous rectification.
  • H-bridge motor control circuits.
  • Battery protection circuits.

FDS6912 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS6912?

30V.

What package does the FDS6912 come in?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDS6912 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum drain current?

6A.

What is the on-resistance at 10V gate drive?

28mOhm maximum at Id=6A, Vgs=10V.

Does the FDS6912 have logic level gate drive?

Yes, it features logic level gate drive.

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