FDS6911 Dual N-Channel MOSFET array rated for 20V drain-source voltage and 7.5A continuous drain current, with 13mOhm on-resistance. Surface mount in 8-SOIC package.
Mfr Part #:

FDS6911

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel MOSFET array rated for 20V drain-source voltage and 7.5A continuous drain current, with 13mOhm on-resistance. Surface mount in 8-SOIC package.
✓ Total Stock: 301,000 pcs

FDS6911 Available from 1 distributor

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FDS6911 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6911 Description

Short technical summary and product information.

The FDS6911 is a dual N-Channel MOSFET array from ON Semiconductor, designed for efficient power switching in space-constrained applications. It features a drain-to-source voltage rating of 20V and a continuous drain current of 7.5A, with a maximum on-resistance of 13mOhm at 7.5A and 10V gate drive. The device includes a logic level gate feature, enabling direct drive from low-voltage logic circuits.

 

Key electrical characteristics include a maximum gate threshold voltage of 3V at 250µA drain current, a gate charge of 24nC at 10V, and an input capacitance of 1130pF at 15V drain-source voltage. These parameters make it suitable for high-frequency switching applications where low gate drive losses are important.

 

The MOSFET is housed in an 8-SOIC surface-mount package with a 3.90mm body width, offering a compact footprint for PCB assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW. The dual-channel configuration allows for independent or parallel operation in circuits such as DC-DC converters, load switches, and motor drivers.

FDS6911 Quick Information

Product Type: MOSFET Array
Canonical Name: FDS6911 Dual N-Channel MOSFET Array
Subcategory: Dual N-Channel MOSFET Array

FDS6911 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6911 Features

  • Dual N-Channel MOSFET configuration.
  • Rated for 20V drain-source voltage.
  • 7.5A continuous drain current.
  • 13mOhm maximum on-resistance.
  • Logic level gate drive capability.

FDS6911 Applications

  • Suitable for load switching applications.
  • Used in DC-DC converter circuits.
  • Ideal for power management in portable devices.
  • Can be used in motor control circuits.

FDS6911 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS6911?

The drain-source voltage (Vdss) is 20V.

What package is the FDS6911 available in?

The FDS6911 is available in an 8-SOIC surface-mount package (0.154", 3.90mm width).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDS6911 RoHS compliant?

RoHS compliance is listed as RoHS3 compliant but is unverified.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 7.5A.

What is the on-resistance of the FDS6911?

The maximum on-resistance (Rds on) is 13mOhm at Id=7.5A and Vgs=10V.

Does the FDS6911 have a logic level gate?

Yes, it features a logic level gate for low-voltage drive.

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