| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
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301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6911 is a dual N-Channel MOSFET array from ON Semiconductor, designed for efficient power switching in space-constrained applications. It features a drain-to-source voltage rating of 20V and a continuous drain current of 7.5A, with a maximum on-resistance of 13mOhm at 7.5A and 10V gate drive. The device includes a logic level gate feature, enabling direct drive from low-voltage logic circuits.
Key electrical characteristics include a maximum gate threshold voltage of 3V at 250µA drain current, a gate charge of 24nC at 10V, and an input capacitance of 1130pF at 15V drain-source voltage. These parameters make it suitable for high-frequency switching applications where low gate drive losses are important.
The MOSFET is housed in an 8-SOIC surface-mount package with a 3.90mm body width, offering a compact footprint for PCB assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW. The dual-channel configuration allows for independent or parallel operation in circuits such as DC-DC converters, load switches, and motor drivers.
The drain-source voltage (Vdss) is 20V.
The FDS6911 is available in an 8-SOIC surface-mount package (0.154", 3.90mm width).
The operating junction temperature range is -55°C to 150°C.
RoHS compliance is listed as RoHS3 compliant but is unverified.
The maximum continuous drain current (Id) is 7.5A.
The maximum on-resistance (Rds on) is 13mOhm at Id=7.5A and Vgs=10V.
Yes, it features a logic level gate for low-voltage drive.