| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,245 pcs
|
5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,256 pcs
|
2256 pcs | On Request | 1 | On Request | On Request | 1740+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6910 is a dual N-channel MOSFET array manufactured by On Semiconductor. This component is designed for various electronic applications requiring efficient switching and power management.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous current capability of 7.5A. The on-resistance (Rds On) is rated at a low 13mOhm at an Id of 7.5A and Vgs of 10V, indicating low conduction losses. The gate charge (Qg) is 24nC at 10V, and the input capacitance (Ciss) is 1130pF at 15V, which are important parameters for switching speed.
This MOSFET array utilizes a logic level gate, making it suitable for direct interface with microcontrollers and other low-voltage logic circuits. The threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. The device has a power dissipation of 900mW and operates within a temperature range of -55°C to 150°C (TJ).
The FDS6910 is provided in an 8-SOIC surface mount package, measuring 0.154" (3.90mm) in width. This mounting type is common for automated assembly processes.
The maximum drain-to-source voltage (Vdss) for the FDS6910 is 30V.
The FDS6910 can handle a continuous current of 7.5A.
The Rds On is a maximum of 13mOhm when the drain current (Id) is 7.5A and the gate-source voltage (Vgs) is 10V.
The maximum gate charge (Qg) is 24nC at a gate-source voltage (Vgs) of 10V.
The maximum input capacitance (Ciss) is 1130pF at a drain-source voltage (Vds) of 15V.
The maximum gate threshold voltage (Vgs(th)) is 3V at a drain current (Id) of 250µA.
The FDS6910 operates between -55°C and 150°C (TJ).