| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDS6900AS-G is a dual N-channel MOSFET (Metal Oxide) from On Semiconductor, designed for surface mount applications. It features two N-channel MOSFETs in a single 8-SOIC package, providing a compact solution for switching and power management circuits.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, continuous drain current of 6.9A and 8.2A per channel, and a maximum drain-source on-resistance of 27mOhm at 10V gate drive. The device has a logic level gate feature, allowing operation with lower gate voltages. Gate charge is 15nC at 10V, and input capacitance is 600pF at 15V.
The MOSFET is suitable for applications requiring efficient switching and low on-resistance. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW at 25°C ambient. The 8-SOIC package (0.154", 3.90mm width) is widely used in surface mount designs.
Compliance information includes RoHS3 compliance (unverified), MSL 1 unlimited, and REACH unaffected. Note that datasheet and pricing are not available in this listing.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
27mOhm max at 6.9A, 10V.
15nC at 10V.
600pF at 15V.