FDS6898AZ Dual N-Channel MOSFET rated for 20V drain-source voltage and 9.4A continuous drain current, housed in an 8-SOIC package. Features logic level gate for low-voltage drive compatibility.
Mfr Part #:

FDS6898AZ

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel MOSFET rated for 20V drain-source voltage and 9.4A continuous drain current, housed in an 8-SOIC package. Features logic level gate for low-voltage drive compatibility.
✓ Total Stock: 14,908 pcs
$ Price Range: $0.78 - $1.91

FDS6898AZ Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDS6898AZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6898AZ Description

Short technical summary and product information.

The FDS6898AZ is a dual N-Channel Power MOSFET from ON Semiconductor, designed for space-constrained power management applications. It delivers a maximum drain-source voltage of 20V and a continuous drain current of 9.4A, with a low on-resistance of 14mOhm (maximum at Vgs = 4.5V). The device incorporates logic-level gate technology, enabling direct drive from low-voltage logic circuits without requiring additional gate driver stages.

 

This MOSFET is housed in a compact 8-SOIC (SOIC-8) surface-mount package with a 3.90mm body width, suitable for high-density PCB layouts. Typical electrical characteristics include a maximum gate charge of 23nC at 4.5V and an input capacitance of 1821pF at 10V drain-source voltage, ensuring moderate switching performance. The device can dissipate up to 900mW and operates across a junction temperature range of -55°C to 150°C, supporting a wide range of thermal environments.

 

With RoHS3 compliance and an MSL rating of 1 (unlimited floor life), the FDS6898AZ is suited for general-purpose switching, load switching, and DC-DC converter applications in consumer, industrial, and computing systems.

FDS6898AZ Quick Information

Product Type: MOSFET Array
Canonical Name: FDS6898AZ Dual N-Channel MOSFET, 20V, 9.4A, 8-SOIC
Subcategory: Dual N-Channel

FDS6898AZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6898AZ Estimated Pricing

Qty Low High
1+ $1.91 $1.91
10+ $1.17 $1.17
100+ $0.78 $0.78
2,500+ $0.78 $0.78

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6898AZ Features

  • Dual N-Channel MOSFET in compact 8-SOIC.
  • Rated for 20V drain-source voltage.

FDS6898AZ Applications

  • Power management in portable electronics.
  • Load switching for low-voltage rails.
  • DC-DC converter output stages.
  • Battery protection circuits.

FDS6898AZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDS6898AZ?

The maximum drain-source voltage (Vdss) is 20V.

What is the maximum drain current rating?

The continuous drain current is 9.4A.

What package is the FDS6898AZ offered in?

It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the FDS6898AZ RoHS compliant?

Yes, it is marked as RoHS3 Compliant.

Does the FDS6898AZ have a logic-level gate?

Yes, it features a logic-level gate with a maximum threshold voltage of 1.5V at 250µA.

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