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72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDS6898A is an N-Channel Logic Level MOSFET manufactured by NXP Semiconductors. It utilizes an advanced PowerTrench process to minimize on-state resistance and enhance switching performance, making it suitable for low voltage and battery-powered applications where efficiency is critical.
Key electrical specifications include a breakdown voltage of 20V, a maximum on-resistance (RDS(on)) of 14mΩ, and a continuous current rating of 9.4A. The MOSFET also features a threshold voltage of 1V, an input capacitance of 1.821nF, and switching times with a rise time of 15ns and a fall time of 16ns.
With a maximum power dissipation of 2W, the FDS6898A operates within a temperature range of -55°C to 150°C. It is supplied in a surface-mount SOIC package with SMD/SMT termination.
This dual-channel MOSFET is well-suited for applications requiring efficient power management and fast switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the FDS6898A is 20V.
The maximum on-resistance for the FDS6898A is 14mΩ.
The continuous current rating of the FDS6898A is 9.4A.
The FDS6898A operates between -55°C and 150°C.
The FDS6898A MOSFET is supplied in a SOIC package.