| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current | |
| Current | |
| Drain Source On Resistance (Minimum/Typical/Maximum @ VGS=1.8 V, ID=6 A) | |
| Drain Source On Resistance (Minimum/Typical/Maximum @ VGS=2.5 V, ID=7 A) | |
| Drain Source On Resistance (Minimum/Typical/Maximum @ VGS=4.5 V, ID=8 A) | |
| Drain Source On Resistance (Typical/Maximum @ VGS=4.5 V, ID=8 A, TJ=125 °C) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage | |
| Gate to Source Voltage (Vgss) | |
| Gate-Drain Charge | |
| Gate-Source Charge | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| On-State Drain Current | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ Dual operation, TA=25 °C) | |
| Power Dissipation (Maximum @ Single operation (Note 1 a), TA=25 °C) | |
| Power Dissipation (Maximum @ Single operation (Note 1 b), TA=25 °C) | |
| Power Dissipation (Maximum @ Single operation (Note 1 c), TA=25 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Total Gate Charge | |
| Turn-Off Delay Time | |
| Turn-Off Fall Time | |
| Turn-On Delay Time | |
| Turn-On Rise Time | |
| Vgs(th) (Max) @ Id |
The FDS6894A is a dual N-Channel Logic Level MOSFET manufactured by On Semiconductor (formerly Fairchild Semiconductor) using advanced PowerTrench technology. It is designed for low voltage, battery powered applications requiring low on-state resistance and fast switching. The device is rated for a maximum drain-source voltage of 20V and continuous drain current of 8A per device at 25°C. It features a logic level gate, allowing direct drive from low voltage logic circuits. The on-resistance is specified at multiple gate voltages: 17mΩ typical at 4.5V, 20mΩ at 2.5V, and 30mΩ at 1.8V, making it suitable for 1.8V, 2.5V, and 3.3V systems. The device is housed in an 8-lead SO-8 package (SOIC) with surface mount gull-wing leads. It is supplied in tape and reel packaging with 2500 units per reel. The operating junction temperature range is -55°C to 150°C. The MOSFET also has low gate charge of 17nC typical, which reduces switching losses. Typical applications include DC-DC converters, power management in portable devices, and load switching.
| Qty | Low | High |
|---|---|---|
| 263+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SOIC (0.154", 3.90mm Width), surface mount.
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
8A at TA=25°C per device (maximum).
20mΩ typical.
0.6V to 1.5V (minimum to maximum) with 0.8V typical.