| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
463 pcs
|
463 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage Temperature Coefficient | |
| Configuration | |
| Current | |
| Drain Current (Pulsed) (Max) | |
| Drain Source On Resistance (Maximum @ VGS=4.5 V, ID=7.5 A, TJ=125 °C) | |
| Drain Source On Resistance (Typical/Maximum @ VGS=2.5 V, ID=6.5 A) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage (BVDSS) | |
| FET Feature | |
| Forward Transconductance (gfs) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage Temperature Coefficient | |
| Gate-Body Leakage, Forward (IGSSF) | |
| Gate-Body Leakage, Reverse (IGSSR) | |
| Gate-Drain Charge (Qgd) | |
| Gate-Source Charge (Qgs) | |
| Gate-Source Voltage (Max) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| On-State Drain Current (Id(on)) | |
| Operating Temperature | |
| Output Capacitance (Coss) | |
| Power | |
| Power Dissipation - Dual Operation (Max) | |
| Power Dissipation Single (Maximum @ TA=25 °C, Note 1 A) | |
| Power Dissipation Single (Maximum @ TA=25 °C, Note 1 b) | |
| Power Dissipation Single (Maximum @ TA=25 °C, Note 1 c) | |
| Quantity Per Reel | |
| Rds On (Max) @ Id, Vgs | |
| Reel Size | |
| Reverse Transfer Capacitance (Crss) | |
| SVHC Present | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Turn-Off Delay Time (Max) | |
| Turn-Off Fall Time (Max) | |
| Turn-On Delay Time (Max) | |
| Turn-On Rise Time (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VDS=16 V, VGS=0 V) | |
| Zero Gate Voltage Drain Current (Maximum @ VDS=16 V, VGS=0 V, TJ=55 °C) |
The FDS6892AZ is a dual N-Channel Logic Level MOSFET manufactured using Fairchild Semiconductor's PowerTrench process, now part of On Semiconductor. It is designed for low voltage and battery-powered applications where low power loss and fast switching are required.
The device has a maximum drain-source voltage of 20V and a continuous drain current of 7.5A at 25°C. The on-resistance is typically 18mΩ at VGS=4.5V and 24mΩ at VGS=2.5V, making it suitable for logic level gate drive. Gate charge is typically 12nC, enabling efficient switching at high frequencies.
The FDS6892AZ is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) with a supplier device package of 8-SOIC. It operates over a junction temperature range of -55°C to +150°C. The device is RoHS3 compliant (unverified) and REACH unaffected (unverified).
| Qty | Low | High |
|---|---|---|
| 214+ | $1.40 | $1.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDS6892AZ is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 compliant but is unverified — treat as low confidence.
The continuous drain current is 7.5A at TA=25°C, and the pulsed drain current is 30A.
The maximum on-resistance is 18mΩ at VGS=4.5V and ID=7.5A.
The gate threshold voltage ranges from 0.6V minimum, 1.0V typical, to 1.5V maximum at VDS=VGS, ID=250µA.
The total gate charge is 12nC typical and 17nC maximum at VDS=10V, ID=7.5A, VGS=4.5V.