| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6875 is a dual P-Channel MOSFET array from On Semiconductor, designed for low-voltage power management and load switching applications. Each MOSFET features a logic-level gate, enabling direct drive from 5V logic signals. The device is rated for a maximum drain-source voltage of 20V and a continuous drain current of 6A. On-resistance is typically 30mOhm at 4.5V gate drive. The gate threshold voltage is a maximum of 1.5V at 250µA, and the maximum gate charge is 31nC at 5V. Input capacitance is 2250pF at 10V drain-source. The device can dissipate up to 900mW of power. It is housed in a surface-mount 8-SOIC package (0.154" width, 3.90mm) and operates over a junction temperature range of -55°C to 150°C. The dual-channel configuration makes it suitable for H-bridge, power rail switching, and battery protection circuits in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.90 | $1.90 |
| 10+ | $1.21 | $1.21 |
| 100+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The FDS6875 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant, but this information is unverified.
The maximum continuous drain current is 6A.
The maximum gate threshold voltage is 1.5V at 250µA drain current.
The maximum drain-source on-resistance is 30mOhm at 6A drain current and 4.5V gate drive.