FDS6875 FDS6875 is a dual P-Channel logic-level MOSFET from On Semiconductor, rated for 20V drain-source voltage and 6A continuous drain current with 30mOhm maximum on-resistance.
Mfr Part #:

FDS6875

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS6875 is a dual P-Channel logic-level MOSFET from On Semiconductor, rated for 20V drain-source voltage and 6A continuous drain current with 30mOhm maximum on-resistance.
✓ Total Stock: 386,600 pcs
$ Price Range: $0.81 - $1.90

FDS6875 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
20,000 pcs
20000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 04+ On Request On Request

FDS6875 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDS6875 Description

Short technical summary and product information.

The FDS6875 is a dual P-Channel MOSFET array from On Semiconductor, designed for low-voltage power management and load switching applications. Each MOSFET features a logic-level gate, enabling direct drive from 5V logic signals. The device is rated for a maximum drain-source voltage of 20V and a continuous drain current of 6A. On-resistance is typically 30mOhm at 4.5V gate drive. The gate threshold voltage is a maximum of 1.5V at 250µA, and the maximum gate charge is 31nC at 5V. Input capacitance is 2250pF at 10V drain-source. The device can dissipate up to 900mW of power. It is housed in a surface-mount 8-SOIC package (0.154" width, 3.90mm) and operates over a junction temperature range of -55°C to 150°C. The dual-channel configuration makes it suitable for H-bridge, power rail switching, and battery protection circuits in space-constrained designs.

FDS6875 Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDS6875 - Dual P-Channel MOSFET 20V 6A 8-SOIC
Subcategory: Dual P-Channel

FDS6875 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6875 Estimated Pricing

Qty Low High
1+ $1.90 $1.90
10+ $1.21 $1.21
100+ $0.81 $0.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6875 Features

  • Dual P-Channel logic-level MOSFET array.
  • 20V maximum drain-source voltage rating.
  • 6A continuous drain current capability.
  • 30mOhm maximum on-resistance at 4.5V.
  • Surface-mount 8-SOIC package.

FDS6875 Applications

  • Ideal for load switching in portable devices.
  • Used in H-bridge and motor control circuits.
  • Suitable for battery protection and power multiplexing.
  • Designed for low-voltage power rail switching.

FDS6875 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the FDS6875?

The maximum drain-source voltage (Vdss) is 20V.

What is the package type of the FDS6875?

The FDS6875 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FDS6875 RoHS compliant?

The device is listed as RoHS3 Compliant, but this information is unverified.

What is the drain current rating of the FDS6875?

The maximum continuous drain current is 6A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.5V at 250µA drain current.

What is the on-resistance of the FDS6875?

The maximum drain-source on-resistance is 30mOhm at 6A drain current and 4.5V gate drive.

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