| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,800 pcs
|
11800 pcs | On Request | 1 | On Request | On Request | 0837+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDS6812A is a dual N-Channel Logic Level MOSFET from On Semiconductor, designed for low voltage and battery-powered applications. It is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance.
Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current of 6.7A at 25°C. The device features a low on-resistance of 22mΩ typical at VGS=4.5V and ID=6.7A, and 35mΩ at VGS=2.5V. The gate threshold voltage ranges from 0.6V minimum to 1.5V maximum at ID=250µA. Input capacitance is 1082pF typical at VDS=10V, and total gate charge is 12nC typical at VGS=4.5V.
The MOSFET is housed in an 8-SOIC surface mount package with a 0.154-inch width (3.90mm). It is supplied on 13-inch reels with 12mm tape width, with a standard reel quantity of 2500 units. The operating junction temperature range is -55°C to 150°C. Power dissipation for single operation is 0.9W (Note 1c) and for dual operation is 2W.
This device is suitable for applications requiring logic level gate drive, such as DC-DC converters, load switches, and battery management systems. The dual configuration allows for compact designs in space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.47 | $0.47 |
| 5,000+ | $0.43 | $0.43 |
| 7,500+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20 V.
The continuous drain current (Id) is 6.7 A at Tc=25°C.
The maximum on-resistance is 22 mΩ at VGS=4.5V and ID=6.7A.
The device is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant, but this is unverified. Verify with the manufacturer.
The maximum gate threshold voltage is 1.5 V at VDS=VGS and ID=250µA.