| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
554,500 pcs
|
554500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,968 pcs
|
1968 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,133 pcs
|
1133 pcs | On Request | 1 | On Request | On Request | 1349+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6699S is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications where low on-resistance and high current capability are required.
Key electrical characteristics include a drain-source voltage rating of 30V, continuous drain current of 21A at ambient temperature, and a maximum Rds(on) of only 3.6 mOhm at Vgs=10V and 4.5 mOhm at Vgs=4.5V. The gate threshold voltage is 3V maximum at 1mA. The device exhibits a typical input capacitance of 3610 pF and a total gate charge of 91 nC, enabling efficient gate drive.
The FDS6699S is rated for a maximum power dissipation of 2.5W at ambient temperature and can operate over a junction temperature range of -55°C to 150°C. It is housed in an 8-SOIC (0.154", 3.90mm width) surface mount package, suitable for compact PCB layouts. The device is lead-free and RoHS compliant per available records.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The device is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant in the database, but this data is unverified.
The maximum total gate charge is 91 nC at Vgs=10V.
The maximum input capacitance is 3610 pF at Vds=15V.
The maximum on-resistance is 3.6 mOhm at Vgs=10V, Id=21A.