Mfr Part #:

FDS6692A

N-Channel MOSFET rated for 30V drain-source voltage and 9A continuous drain current with 11.5mOhm on-resistance at 10V gate drive. Surface mount package in 8-SOIC.

✓ Total Stock: 15,000 pcs

$ Price Range: $0.32

FDS6692A Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	15,000 pcs On Request	15000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDS6692A Description

Short technical summary and product information.

The FDS6692A is an N-Channel MOSFET from ON Semiconductor designed for low-voltage power management applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 9A at 25°C ambient temperature. The device offers a low on-resistance of 11.5mOhm at 10V gate drive, enabling efficient power switching. The gate threshold voltage is 2.5V at 250µA, and the input capacitance is 1610pF at 15V Vds. The gate charge is 29nC at 10V.

This MOSFET is housed in a standard 8-SOIC surface mount package with gull wing leads, suitable for automated assembly. The operating junction temperature range is -55°C to 150°C, and maximum power dissipation is 1.47W at ambient temperature. The device is marked as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified in the source data.

Typical applications include power management circuits, load switching, DC-DC converters, and battery protection in portable electronics. The part is available in tape and reel packaging through distributor part numbers such as FDS6692ATR-ND.

FDS6692A Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FDS6692A N-Channel MOSFET

Subcategory: Single MOSFET

FDS6692A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDS6692A Estimated Pricing

Qty	Low	High
2,003+	$0.32	$0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6692A Features

N-Channel MOSFET with 30V drain-source voltage rating.
Continuous drain current of 9A at 25°C.
Low on-resistance of 11.5mOhm at 10V gate drive.
Surface mount 8-SOIC package.
Wide operating temperature range of -55°C to 150°C.

FDS6692A Applications

Power management in portable electronics.
Load switching for low-voltage systems.
DC-DC converter output stages.
Battery protection circuits.

FDS6692A FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vdss) of the FDS6692A?

30V.

What is the continuous drain current rating?

9A at ambient temperature.

What is the package type of the FDS6692A?

8-SOIC (0.154", 3.90mm Width) surface mount.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the gate threshold voltage (Vgs(th))?

2.5V at 250µA drain current.

Is the FDS6692A RoHS compliant?

The device is marked as RoHS3 Compliant, but this is unverified.

What is the on-resistance (Rds(on))?

11.5mOhm maximum at 9A drain current and 10V gate drive.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	9 A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1610 pF @ 15 V
Lead Style	Gull Wing
Medical Grade	Yes
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.47 W (Ta)
Rds On (Max) @ Id, Vgs	11.5 mOhm @ 9A, 10V
Supplier Device Package	8-SOIC
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.5 V @ 250 µA