| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6692 is a single N-Channel MOSFET manufactured by On Semiconductor. It is designed for low-voltage power switching applications and offers a drain-to-source voltage (VDS) rating of 30V. The device can handle a continuous drain current (ID) of up to 12A at an ambient temperature of 25°C, making it suitable for moderate power requirements.
Key electrical characteristics include a maximum drain-source on-resistance (RDS(on)) of 12mOhm when driven at VGS=10V and ID=12A, ensuring low conduction losses. The gate threshold voltage (VGS(th)) is a maximum of 3V at ID=250µA, and the gate drive voltage range is specified from 4.5V to 10V. The device also features a maximum gate charge (Qg) of 25nC at VGS=5V and an input capacitance (Ciss) of 2164pF at VDS=15V, which aids in estimating switching performance.
The FDS6692 is packaged in an industry-standard 8-SOIC surface mount package (8-SOIC, 0.154" width, 3.90mm body width). It supports an operating junction temperature range of -55°C to 175°C, with a maximum power dissipation of 1W at 25°C. The MOSFET is intended for general-purpose switching and power management functions in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 49+ | $6.12 | $6.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 12A at an ambient temperature of 25°C.
The maximum on-resistance is 12mOhm at Vgs=10V and Id=12A.
The junction temperature range is -55°C to 175°C.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum gate threshold voltage is 3V at Id=250µA.