FDS6690S FDS6690S is an N-Channel MOSFET from On Semiconductor, designed for small signal switching applications. It features 30V drain-source voltage, 10A continuous drain current, and low on-resistance of 16mOhm.
Mfr Part #:

FDS6690S

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS6690S is an N-Channel MOSFET from On Semiconductor, designed for small signal switching applications. It features 30V drain-source voltage, 10A continuous drain current, and low on-resistance of 16mOhm.
✓ Total Stock: 6,714 pcs
$ Price Range: $1.53

FDS6690S Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,524 pcs
2524 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 03+ On Request On Request
Non-Authorised Inventory information
1,690 pcs
1690 pcs On Request 1 On Request On Request N/A On Request On Request

FDS6690S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6690S Description

Short technical summary and product information.

The FDS6690S is an N-Channel MOSFET manufactured by On Semiconductor, designed for small signal switching applications. The device features a drain-source voltage (Vdss) of 30V and a continuous drain current of 10A at 25°C. The maximum drain-source on-resistance is 16mOhm at Vgs=10V and Id=10A, making it suitable for low-loss switching. The gate threshold voltage is 3V maximum at Id=1mA. The device has a gate charge of 16nC at Vgs=5V and input capacitance of 1233pF at Vds=15V.

 

It is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width). The operating temperature range is -55°C to 150°C junction temperature. The MOSFET is RoHS3 compliant and REACH unaffected. The device is suitable for applications such as DC-DC converters, load switches, and power management circuits.

FDS6690S Quick Information

Product Type: MOSFET
Canonical Name: FDS6690S N-Channel MOSFET, 30V, 10A, 8-SOIC
Subcategory: N-Channel MOSFET

FDS6690S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: Non-Compliant

FDS6690S Estimated Pricing

Qty Low High
197+ $1.53 $1.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6690S Features

  • N-Channel MOSFET for small signal switching.
  • 30V drain-source voltage rating.
  • 10A continuous drain current at 25°C.
  • Low on-resistance of 16mOhm at 10V.
  • Surface-mount 8-SOIC package.

FDS6690S Applications

  • Ideal for DC-DC converter circuits.
  • Used in load switch applications.
  • Suitable for power management systems.
  • Applicable in small signal switching designs.

FDS6690S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage (drain-source voltage) of the FDS6690S?

The maximum drain-source voltage is 30V.

What is the package type of the FDS6690S?

The package is 8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range of the FDS6690S?

The operating junction temperature range is -55°C to 150°C.

Is the FDS6690S RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the maximum continuous drain current of the FDS6690S?

The maximum continuous drain current is 10A at 25°C ambient temperature.

What is the gate charge of the FDS6690S?

The maximum gate charge is 16nC at Vgs=5V.

What is the on-resistance of the FDS6690S?

The maximum drain-source on-resistance is 16mOhm at Vgs=10V and Id=10A.

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