| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,524 pcs
|
2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
1,690 pcs
|
1690 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6690S is an N-Channel MOSFET manufactured by On Semiconductor, designed for small signal switching applications. The device features a drain-source voltage (Vdss) of 30V and a continuous drain current of 10A at 25°C. The maximum drain-source on-resistance is 16mOhm at Vgs=10V and Id=10A, making it suitable for low-loss switching. The gate threshold voltage is 3V maximum at Id=1mA. The device has a gate charge of 16nC at Vgs=5V and input capacitance of 1233pF at Vds=15V.
It is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width). The operating temperature range is -55°C to 150°C junction temperature. The MOSFET is RoHS3 compliant and REACH unaffected. The device is suitable for applications such as DC-DC converters, load switches, and power management circuits.
| Qty | Low | High |
|---|---|---|
| 197+ | $1.53 | $1.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The package is 8-SOIC (0.154", 3.90mm Width).
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant (unverified).
The maximum continuous drain current is 10A at 25°C ambient temperature.
The maximum gate charge is 16nC at Vgs=5V.
The maximum drain-source on-resistance is 16mOhm at Vgs=10V and Id=10A.