BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The FDS6690AS is an N-Channel MOSFET manufactured by NXP Semiconductors, designed for high-efficiency synchronous DC-DC power supplies. This component features a 30V breakdown voltage and a maximum current rating of 10A, making it suitable for demanding power applications.
Key electrical specifications include a low RDS(on) of 12mΩ maximum and an input capacitance of 910pF. The MOSFET also has a threshold voltage of 1.6V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W.
The FDS6690AS is housed in a surface-mount SOIC package. Its design incorporates Fairchild's monolithic SyncFET technology, integrating a Schottky diode to replace a separate MOSFET and diode in power supply designs. This integration aims to maximize power conversion efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the FDS6690AS is 30V.
The maximum on-resistance (RDS(on)) of the FDS6690AS is 12mΩ.
The current rating for the FDS6690AS is 10A.
The threshold voltage of the FDS6690AS is 1.6V.
The input capacitance of the FDS6690AS is 910pF.
The FDS6690AS operates within a temperature range of -55°C to 150°C.
The FDS6690AS comes in a SOIC package.