FDS6690AS The FDS6690AS is an N-Channel MOSFET from ON Semiconductor with a 30V drain-source voltage rating and 10A continuous drain current. It features a low 12mOhm on-resistance at 10V gate drive.
Mfr Part #:

FDS6690AS

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6690AS is an N-Channel MOSFET from ON Semiconductor with a 30V drain-source voltage rating and 10A continuous drain current. It features a low 12mOhm on-resistance at 10V gate drive.
✓ Total Stock: 4,769 pcs
$ Price Range: $0.41 - $0.45

FDS6690AS Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 06+ On Request On Request
Non-Authorised Inventory information
2,269 pcs
2269 pcs On Request 1 On Request On Request On Request On Request On Request

FDS6690AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6690AS Description

Short technical summary and product information.

The FDS6690AS is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications. Key electrical characteristics include a drain-to-source voltage (Vdss) of 30V, continuous drain current of 10A at ambient temperature, and a maximum on-resistance of 12mOhm at Vgs=10V and Id=10A. The gate threshold voltage is 3V maximum at Id=1mA, and the device can be driven with 4.5V or 10V gate drive for optimized Rds(on). The MOSFET is housed in an 8-SOIC surface-mount package (0.154" width, 3.90mm body width) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature. This device is suitable for load switching, DC-DC converters, and other low-voltage power management circuits.

FDS6690AS Quick Information

Product Type: MOSFET (Metal Oxide)
Series: PowerTrench SyncFET
Canonical Name: FDS6690AS N-Channel MOSFET
Subcategory: Single N-Channel

FDS6690AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6690AS Estimated Pricing

Qty Low High
100+ $0.45 $0.45
500+ $0.41 $0.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6690AS Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rating of 10A.
  • Low on-resistance of 12mOhm at 10V gate drive.
  • Surface-mount 8-SOIC package.
  • Operating temperature range -55°C to 150°C.

FDS6690AS Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Applicable in low-voltage motor control.

FDS6690AS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDS6690AS?

30V.

What is the continuous drain current?

10A at ambient temperature.

What is the on-resistance?

12mOhm maximum at Id=10A and Vgs=10V.

What package is the FDS6690AS available in?

8-SOIC (0.154", 3.90mm width) surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDS6690AS RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified.

What is the gate threshold voltage?

Maximum 3V at Id=1mA.

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