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| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6690A is an N-Channel enhancement-mode power MOSFET from onsemi, designed for low-voltage switching applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current of 11A at ambient temperature. The device features a maximum on-resistance of 12.5mOhm when driven with Vgs=10V and Id=11A, ensuring efficient power handling.
With a gate threshold voltage of 3V max at 250µA, the MOSFET can be driven by logic-level signals. The input capacitance is 1205pF at Vds=15V, and the gate charge is 16nC at Vgs=5V, enabling moderate switching speed. The maximum gate-source voltage rating is ±20V.
The FDS6690A is housed in a surface-mount 8-SOIC package (0.154", 3.90mm width) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.29 | $1.29 |
| 10+ | $0.80 | $0.80 |
| 100+ | $0.54 | $0.54 |
| 2,500+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
8-SOIC (0.154", 3.90mm Width)
-55°C to 150°C (junction temperature)
RoHS3 Compliant (unverified)
12.5mOhm at Id=11A, Vgs=10V
3V max at Id=250µA
1205pF at Vds=15V