| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,816 pcs
|
4816 pcs | On Request | 1 | On Request | On Request | 448 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6690 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. Designed for high-efficiency power management applications, this device offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 10A at ambient temperature. The MOSFET features a low maximum on-resistance of 13.5mOhm at a gate drive of 10V, enabling reduced conduction losses in switching circuits.
Key electrical characteristics include a maximum gate charge of 18nC at 5V and an input capacitance of 1340pF at 15V drain-source voltage, which support efficient high-frequency switching. The device is specified with a gate threshold voltage of up to 3V at 250µA drain current and a maximum gate-source voltage rating of ±20V. The recommended drive voltage range is 4.5V to 10V for optimal on-resistance performance.
The FDS6690 is housed in a standard 8-SOIC surface-mount package with a 3.90mm body width, suitable for automated assembly processes. It is rated for operation over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 1W at ambient temperature. This MOSFET is appropriate for load switching, DC-DC converter, and power management functions in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 188+ | $1.60 | $1.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDS6690 has a maximum drain-source voltage (Vdss) of 30V.
The maximum continuous drain current is 10A at ambient temperature (Ta).
The maximum on-resistance (Rds on) is 13.5mOhm at a drain current of 10A and gate-source voltage of 10V.
The FDS6690 is available in an 8-SOIC surface-mount package with a 3.90mm body width.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 3V at a drain current of 250µA.
The maximum total gate charge (Qg) is 18nC at a gate-source voltage of 5V.