| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The FDS6685-NBCM003A is a P-Channel MOSFET manufactured by On Semiconductor. This component is designed for use in applications requiring efficient power switching and control. It operates with a drain-source breakdown voltage of -30V and can handle a maximum continuous drain current of -8.8A.
The MOSFET exhibits a low on-resistance, with a maximum of 35mΩ at VGS = 4.5V and 20mΩ at VGS = 10V. The gate charge is typically 17nC at VGS = 4.5V, and the input capacitance is approximately 1604pF.
Packaged in an SOIC-8 case, this device is suitable for surface mounting. The MSL rating is 1, with a maximum temperature of 260°C. It is supplied on a reel with a standard package quantity of 2500 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (V(BR)DSS) of the FDS6685-NBCM003A is -30 V.
The maximum Continuous Drain Current (ID) for the FDS6685-NBCM003A is -8.8 A.
The maximum On-Resistance (RDS(on)) of the FDS6685-NBCM003A at VGS = 10 V is 20 mΩ.
The typical Gate Charge (Qg) of the FDS6685-NBCM003A at VGS = 4.5 V is 17 nC.
The FDS6685-NBCM003A has a P-Channel polarity.
The FDS6685-NBCM003A is available in a SOIC-8 package.