| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,998 pcs
|
16998 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,512 pcs
|
4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
170 pcs
|
170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6681Z is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for power management and load switching applications requiring a 30V maximum drain-source voltage and 20A continuous drain current at ambient temperature. The device features a low maximum on-resistance of 4.6mΩ when driven with a 10V gate-source voltage and 20A drain current, minimizing conduction losses. The gate threshold voltage is 3V maximum at 250µA, and the gate-source voltage can withstand up to ±25V. Input capacitance is 7540pF at 15V Vds, and total gate charge is 260nC at 10V, indicating moderate switching speeds suitable for many DC-DC converter and battery protection circuits. The power dissipation is limited to 2.5W at ambient temperature, and the junction temperature range is -55°C to 150°C. The device is offered in an 8-SOIC (0.154", 3.90mm Width) surface mount package, enabling automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.21 | $3.21 |
| 10+ | $2.03 | $2.03 |
| 100+ | $1.56 | $1.56 |
| 2,500+ | $1.56 | $1.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The FDS6681Z is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The FDS6681Z is marked as RoHS3 compliant, but this status is unverified.
The maximum on-resistance is 4.6mΩ at 20A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 3V at 250µA drain current.
The maximum continuous drain current at Ta is 20A.