FDS6680S MOSFET N-CH 30V 11.5A 8SOIC. This N-Channel Logic Level MOSFET is optimized for DC/DC converters with fast switching and low gate charge.
Mfr Part #:

FDS6680S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
MOSFET N-CH 30V 11.5A 8SOIC. This N-Channel Logic Level MOSFET is optimized for DC/DC converters with fast switching and low gate charge.
✓ Total Stock: 1,962 pcs
$ Price Range: $0.76

FDS6680S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,895 pcs
1895 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
67 pcs
67 pcs On Request 1 On Request On Request On Request On Request On Request

FDS6680S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6680S Description

Short technical summary and product information.

The FDS6680S is an N-Channel Logic Level MOSFET from On Semiconductor, part of the PowerTrench family designed for high-efficiency DC/DC converters. It features a maximum drain-source voltage of 30V, continuous drain current of 11.5A at 25°C, and pulsed current capability of 50A. The device achieves a low on-resistance of 11mOhm maximum at VGS=10V and 11.5A, with a typical gate charge of 19nC enabling fast switching transitions.

 

Packaged in an 8-SOIC (0.154", 3.90mm width) surface mount package, the FDS6680S operates over a junction temperature range of -55°C to 150°C. Power dissipation is rated at 2.5W at 25°C ambient. The MOSFET is optimized for use with logic-level gate drives, supporting VGS thresholds of 1V min, 1.7V typical, and 3V max at 250µA drain current.

 

Typical switching characteristics include turn-on delay of 13ns, rise time of 10ns, turn-off delay of 36ns, and fall time of 13ns. The device also includes a body diode with continuous forward current rating of 2.1A. These specifications make it suitable for high-frequency PWM applications requiring low conduction and switching losses.

FDS6680S Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDS6680S - N-Channel MOSFET, 30V, 11.5A, 8-SOIC
Subcategory: MOSFET - Single

FDS6680S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6680S Estimated Pricing

Qty Low High
395+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6680S Features

  • 30V drain-source breakdown voltage.
  • 11.5A continuous drain current rating.
  • Low on-resistance: 11mOhm at 10V.
  • Fast switching with 19nC gate charge.
  • Surface mount 8-SOIC package.

FDS6680S Applications

  • Used in synchronous DC/DC converters.
  • Ideal for PWM switching power supplies.
  • Suitable for load switching applications.

FDS6680S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type for FDS6680S?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C (TJ).

Is FDS6680S RoHS compliant?

RoHS3 Compliant (unverified).

What is the total gate charge?

Maximum 24 nC, typical 19 nC at VGS=5V.

What is the maximum drain current?

Continuous 11.5A at 25°C; pulsed 50A.

What is the on-resistance?

Maximum 11mOhm at VGS=10V, ID=11.5A; maximum 15mOhm at VGS=4.5V, ID=9.5A.

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