| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
379 pcs
|
379 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
143 pcs
|
143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6680AS is an N-Channel power MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 30V and a continuous drain current of 11.5A (at Ta). The maximum drain-source on-resistance is 10 mOhm at Vgs = 10V and Id = 11.5A. The gate threshold voltage is 3V maximum at Id = 1mA. The device has a maximum gate charge of 30 nC at Vgs = 10V and input capacitance of 1240 pF at Vds = 15V. The maximum power dissipation is 2.5W at ambient temperature. The operating junction temperature range is -55°C to 150°C. This MOSFET is surface mountable in an 8-SOIC package (0.154", 3.90mm width). It is suitable for switching and power management applications where low on-resistance and high efficiency are required. The device is RoHS3 compliant and has a moisture sensitivity level of 1.
30V.
8-SOIC (0.154", 3.90mm Width), surface mount.
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
30 nC at Vgs=10V.
1240 pF at Vds=15V.
11.5A at Ta.