| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,052 pcs
|
11052 pcs | On Request | 1 | On Request | On Request | 1119+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | 0552/0306 | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
88 pcs
|
88 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6680A is an N-Channel enhancement mode MOSFET from ON Semiconductor, designed for efficient power switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 12.5A at ambient temperature. The device achieves a maximum on-resistance of 9.5mOhm when driven with a 10V gate-source voltage, enabling low conduction losses.
Key electrical characteristics include a maximum gate charge of 23nC at 5V and an input capacitance of 1620pF at 15V drain-source voltage. The gate threshold voltage is 3V maximum at 250µA drain current, and the recommended drive voltage range is 4.5V to 10V for optimal Rds(on) performance. The maximum gate-source voltage is ±20V.
The MOSFET is housed in a surface mount 8-SOIC package (0.154" width, 3.90mm width) with gull wing terminals. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at ambient temperature. The device is listed as RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
| 10+ | $1.04 | $1.04 |
| 50+ | $0.77 | $0.77 |
| 100+ | $0.69 | $0.69 |
| 500+ | $0.54 | $0.54 |
| 2,500+ | $0.40 | $0.40 |
| 5,000+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction temperature).
8-SOIC (0.154", 3.90mm Width) surface mount package.
Yes, it is listed as RoHS3 compliant (unverified).
3V at 250µA drain current.
4.5V for minimum Rds(on) and 10V for maximum Rds(on).
23 nC maximum at 5V gate-source voltage.
1620 pF maximum at 15V drain-source voltage.