Mfr Part #:

FDS6680

N-Channel MOSFET rated for 30V drain-source voltage and 11.5A continuous drain current. Features low on-resistance of 10mΩ at 10V gate drive. Surface mount in 8-SOIC package.

✓ Total Stock: 226,000 pcs

$ Price Range: $1.40

FDS6680 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	226,000 pcs On Request	226000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDS6680 Description

Short technical summary and product information.

The FDS6680 is a single N-Channel Logic Level MOSFET from On Semiconductor, designed for efficient power management in DC/DC converters. It is optimized for use with synchronous or conventional switching PWM controllers, offering fast switching and low gate charge.

Key electrical specifications include a maximum drain-source voltage of 30V and continuous drain current of 11.5A at 25°C. The device features a low on-resistance of 10mΩ (max) at VGS = 10V and 15mΩ (max) at VGS = 4.5V. Typical gate charge is 19nC, enabling high-frequency operation. Switching speeds are characterized with typical turn-on delay of 13ns and fall time of 13ns.

The MOSFET is housed in an 8-SOIC surface mount package (0.154", 3.90mm width). It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W at 25°C ambient. Thermal resistance is 50°C/W junction-to-ambient and 25°C/W junction-to-case.

This component is well-suited for power supply designs requiring high efficiency and compact footprint. Its logic-level gate drive allows direct interface with low-voltage PWM controllers.

FDS6680 Quick Information

Product Type: MOSFET

Canonical Name: FDS6680 N-Channel MOSFET

Subcategory: N-Channel MOSFET

FDS6680 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDS6680 Estimated Pricing

Qty	Low	High
214+	$1.40	$1.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6680 Features

N-Channel logic level MOSFET for 30V operation.
Low on-resistance of 10mΩ at 10V gate drive.
Fast switching with typical 19nC gate charge.
Surface mount 8-SOIC package.
Operating temperature range -55°C to 150°C.

FDS6680 Applications

Optimized for switching DC/DC converters.
Suitable for synchronous and conventional PWM controllers.
Used in power management circuits.
Ideal for high-frequency switching applications.

FDS6680 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FDS6680?

30 V.

What package does the FDS6680 come in?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDS6680 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the typical gate threshold voltage?

1.7 V (typical), with a range of 1 V to 3 V.

What is the maximum continuous drain current?

11.5 A at TA = 25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	11.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	2070 pF
Mounting Type	Surface Mount
Operating Temperature	-55 °C / 150 °C
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	10mOhm @ 11.5A, 10V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	8-SOIC
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3V @ 250µA