| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
276,020 pcs
|
276020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,830 pcs
|
1830 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
269 pcs
|
269 pcs | On Request | 1 | On Request | On Request | 1707+4 | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 04:15:32 | |
|
34 pcs
|
34 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6679AZ is a P-Channel MOSFET manufactured by On Semiconductor. It is designed for surface-mount applications and is housed in an 8-SOIC package with a 3.90mm width. The device supports a maximum drain-to-source voltage of 30V and a continuous drain current of 13A at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 9.3 mOhm at a drain current of 13A and a gate-source voltage of 10V. The gate threshold voltage is 3V at a drain current of 250 µA, and the maximum gate-source voltage is ±25V. The device has a gate charge of 96 nC at 10V and an input capacitance of 3845 pF at 15V.
The FDS6679AZ operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at ambient temperature. It is suitable for a variety of power management and load switching applications where P-Channel MOSFETs are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.77 | $1.77 |
| 10+ | $1.02 | $1.02 |
| 100+ | $0.69 | $0.69 |
| 500+ | $0.53 | $0.53 |
| 2,500+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The maximum continuous drain current is 13A at ambient temperature.
The maximum on-resistance is 9.3 mOhm at a drain current of 13A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The FDS6679AZ is available in an 8-SOIC surface-mount package.
The FDS6679AZ is listed as RoHS3 compliant, but this is unverified.