FDS6679AZ The FDS6679AZ is a P-Channel MOSFET from On Semiconductor with a 30V drain-source voltage rating and 13A continuous drain current. It comes in an 8-SOIC surface-mount package.
Mfr Part #:

FDS6679AZ

Available from 9 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6679AZ is a P-Channel MOSFET from On Semiconductor with a 30V drain-source voltage rating and 13A continuous drain current. It comes in an 8-SOIC surface-mount package.
✓ Total Stock: 281,348 pcs
$ Price Range: $0.53 - $1.77

FDS6679AZ Available from 9 distributors

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FDS6679AZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6679AZ Description

Short technical summary and product information.

The FDS6679AZ is a P-Channel MOSFET manufactured by On Semiconductor. It is designed for surface-mount applications and is housed in an 8-SOIC package with a 3.90mm width. The device supports a maximum drain-to-source voltage of 30V and a continuous drain current of 13A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance of 9.3 mOhm at a drain current of 13A and a gate-source voltage of 10V. The gate threshold voltage is 3V at a drain current of 250 µA, and the maximum gate-source voltage is ±25V. The device has a gate charge of 96 nC at 10V and an input capacitance of 3845 pF at 15V.

 

The FDS6679AZ operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at ambient temperature. It is suitable for a variety of power management and load switching applications where P-Channel MOSFETs are required.

FDS6679AZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: P-Channel MOSFET, 30V, 13A, 8-SOIC
Subcategory: Single MOSFET

FDS6679AZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDS6679AZ Estimated Pricing

Qty Low High
1+ $1.77 $1.77
10+ $1.02 $1.02
100+ $0.69 $0.69
500+ $0.53 $0.53
2,500+ $0.53 $0.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6679AZ Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • 13A continuous drain current at ambient temperature.
  • Low on-resistance of 9.3 mOhm at 10V.
  • Surface-mount 8-SOIC package.
  • Operating junction temperature range -55°C to 150°C.

FDS6679AZ Applications

  • Suitable for power load switching circuits.
  • Used in DC-DC converter applications.
  • Ideal for battery management systems.
  • Applicable in motor control circuits.

FDS6679AZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDS6679AZ?

The maximum drain-to-source voltage is 30V.

What is the maximum continuous drain current of the FDS6679AZ?

The maximum continuous drain current is 13A at ambient temperature.

What is the on-resistance of the FDS6679AZ?

The maximum on-resistance is 9.3 mOhm at a drain current of 13A and gate-source voltage of 10V.

What is the operating temperature range of the FDS6679AZ?

The operating junction temperature range is -55°C to 150°C.

What package is the FDS6679AZ available in?

The FDS6679AZ is available in an 8-SOIC surface-mount package.

Is the FDS6679AZ RoHS compliant?

The FDS6679AZ is listed as RoHS3 compliant, but this is unverified.

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