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FDS6679 FDS6679 is a P-Channel MOSFET from On Semiconductor with 30V drain-source voltage and 13A drain current. It features a low 9mOhm on-resistance at 10V gate drive.
Mfr Part #:

FDS6679

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDS6679 is a P-Channel MOSFET from On Semiconductor with 30V drain-source voltage and 13A drain current. It features a low 9mOhm on-resistance at 10V gate drive.
✓ Total Stock: 232 pcs

FDS6679 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
200 pcs
On Request
200 pcs On Request 1 On Request On Request 13+ On Request On Request
OTL Components ✓
Non-Authorised Inventory information
32 pcs
On Request
32 pcs On Request 1 On Request On Request On Request On Request On Request
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FDS6679 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDS6679 Description

Short technical summary and product information.

The FDS6679 is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for surface mount applications and housed in an 8-SOIC package (0.154", 3.90mm Width).

 

This device offers a maximum drain-source voltage of 30V and a continuous drain current of 13A at ambient temperature. The maximum on-resistance is 9mOhm at a gate drive of 10V and 13A drain current, enabling efficient power switching. The gate threshold voltage is 3V maximum at 250µA drain current.

 

The FDS6679 features a maximum input capacitance of 3939pF at 15V drain-source and a maximum gate charge of 100nC at 10V gate-source. It can operate over a junction temperature range of -55°C to 175°C. The maximum power dissipation is 2.5W at ambient temperature.

FDS6679 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDS6679 P-Channel MOSFET 30V 13A 8SOIC
Subcategory: Single MOSFET

FDS6679 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

FDS6679 Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • 13A continuous drain current at ambient temperature.
  • Low 9mOhm on-resistance at 10V gate drive.
  • Surface mount 8-SOIC package.
  • Operating junction temperature range -55°C to 175°C.

FDS6679 Applications

  • Ideal for power management and load switching.
  • Used in DC-DC converter circuits.
  • Suitable for battery protection applications.
  • Applicable in portable device power control.

FDS6679 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDS6679?

The maximum drain-source voltage is 30V.

What is the maximum drain current of the FDS6679?

The maximum drain current is 13A at ambient temperature.

What is the on-resistance of the FDS6679?

The maximum on-resistance is 9mOhm at 13A drain current and 10V gate-source voltage.

What package is the FDS6679 available in?

The FDS6679 is available in an 8-SOIC surface mount package (0.154", 3.90mm Width).

What is the operating temperature range of the FDS6679?

The operating junction temperature range is -55°C to 175°C.

Is the FDS6679 RoHS compliant?

The FDS6679 is listed as RoHS3 Compliant (unverified).

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