| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,005 pcs
|
24005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The FDS6676AS-G is an N-Channel PowerTrench SyncFET MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power conversion applications requiring low on-resistance and fast switching.
Key electrical specifications include a drain-to-source voltage rating of 30V, a continuous drain current of 14.5A at 25°C, and a maximum on-resistance of 6mOhm at Vgs=10V and Id=14.5A. The device features a gate charge of 63nC at Vgs=10V and input capacitance of 2510pF at Vds=15V, enabling efficient switching performance.
The MOSFET is housed in an 8-SOIC surface-mount package (0.154" width, 3.90mm width) and supports a wide operating temperature range from -55°C to 150°C. The maximum power dissipation is 1W at 25°C ambient. The device is suitable for synchronous rectification, DC-DC converters, and other power management circuits.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
14.5A at 25°C.
6mOhm at Vgs=10V, Id=14.5A.
63nC at Vgs=10V.