| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85,000 pcs
|
85000 pcs | On Request | 1 | On Request | On Request | 1536+ | On Request | On Request | |
|
6,358 pcs
|
6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,146 pcs
|
2146 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,804 pcs
|
1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | 1441 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6675BZ is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low voltage power switching applications requiring high efficiency and compact size. The device offers a maximum drain-source voltage (Vdss) of 30V and a continuous drain current of 11A at ambient temperature.
Key electrical characteristics include a low on-resistance of 13 mOhm maximum at Vgs = 10V and Id = 11A, a gate charge of 62 nC, and an input capacitance of 2470 pF. The gate threshold voltage is 3V maximum at 250 µA, and the device can be driven with logic-level voltages (4.5V) for reduced Rds(on). Maximum power dissipation is 2.5W at ambient temperature.
The MOSFET is housed in an 8-SOIC surface mount package (0.154", 3.90mm width) and operates over a junction temperature range of -55°C to 150°C. It is suitable for automated assembly and space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.42 | $1.42 |
| 10+ | $0.89 | $0.89 |
| 100+ | $0.59 | $0.59 |
| 2,500+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 11A at ambient temperature.
The maximum on-resistance is 13 mOhm at Id = 11A and Vgs = 10V.
The device is supplied in an 8-SOIC surface mount package.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The maximum gate threshold voltage is 3V at Id = 250µA.