Mfr Part #:

FDS6675A

The FDS6675A is a 30V, 11A P-Channel PowerTrench MOSFET from On Semiconductor. It offers low on-resistance of 13 mΩ typical at 10V gate drive and comes in an SO-8 surface mount package.

✓ Total Stock: 200,000 pcs

$ Price Range: $0.38 - $0.42

FDS6675A Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	200,000 pcs On Request	200000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDS6675A Description

Short technical summary and product information.

The FDS6675A from On Semiconductor (originally Fairchild) is a P-Channel enhancement-mode MOSFET built using the advanced PowerTrench process. It is designed for efficient power management in applications requiring high current handling and low conduction losses.

Electrical characteristics include a drain-source voltage rating of 30 V and continuous drain current of 11 A at 25°C. The typical RDS(on) is 13 mΩ at VGS = -10 V and 19 mΩ at VGS = -4.5 V. Gate threshold voltage ranges from -1 V to -3 V. Dynamic specs include input capacitance of 2330 pF and total gate charge of 24 nC typical, enabling efficient switching.

The device operates from -55°C to 175°C junction temperature. Power dissipation depends on mounting conditions: 2.5 W with 50°C/W (Note 1a) and 1 W with 125°C/W (Note 1c). It is housed in a standard SO-8 (8-SOIC) surface-mount package, supplied in tape and reel with 2500 units per reel.

Applications include power management, load switch, and battery protection circuits. The wide gate drive voltage range (4.5V to 25V) provides design flexibility.

FDS6675A Quick Information

Product Type: MOSFET

Series: FDS6675A

Canonical Name: FDS6675A — 30V P-Channel PowerTrench MOSFET

Subcategory: P-Channel MOSFET

FDS6675A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1

REACH Status: Compliant

FDS6675A Estimated Pricing

Qty	Low	High
2,500+	$0.42	$0.42
5,000+	$0.39	$0.39
7,500+	$0.38	$0.38
12,500+	$0.38	$0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6675A Features

P-Channel PowerTrench MOSFET for efficient switching.
Rated for 30V drain-source and 11A continuous current.
Typical RDS(on) of 13 mΩ at 10V gate drive.
Wide gate drive voltage range from 4.5V to 25V.
SO-8 surface mount package for compact designs.

FDS6675A Applications

Suitable for power management in portable devices.
Used for load switch and battery protection circuits.
Ideal for high-efficiency DC-DC converter designs.

FDS6675A FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDS6675A?

30 V maximum.

What is the continuous drain current rating?

11 A at 25°C ambient.

What is the typical on-resistance at VGS = -10V?

13 mΩ typical.

What is the operating temperature range?

-55°C to 175°C.

What package is the FDS6675A available in?

SO-8 (8-SOIC) surface mount.

What is the gate threshold voltage range?

-1 V to -3 V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC (typ), 34 nC (max)
Input Capacitance (Ciss) (Max) @ Vds	2330 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Range	-55°C to 175°C
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	10 mΩ (min) / 13 mΩ (typ) / 19 mΩ (max)
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	8-SOIC
Tape & Reel	Yes
Tape Width	12 mm
Technology	PowerTrench
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	-1 V (min), -1.6 V (typ), -3 V (max)