| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,006 pcs
|
2006 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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The Fairchild Semiconductor FDS6675 is a P-Channel Logic Level MOSFET utilizing the advanced PowerTrench process. This process minimizes on-state resistance and gate charge for superior switching performance.
Key electrical specifications include a breakdown voltage of -30V and a maximum drain-source voltage of 30V. The on-resistance (RDS(on)) is a maximum of 13mΩ, and the threshold voltage is -2V. Input capacitance is 2.47nF, with typical rise and fall times of 7.8ns and 60ns, respectively.
With a maximum power dissipation of 2.5W, this MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a surface-mount SOIC package with SMD/SMT termination.
These devices are well-suited for notebook computer applications, including load switching, power management, battery charging circuits, and DC/DC conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum on-resistance is 13mΩ.
The operating temperature range is -55°C to 150°C.
The FDS6675 is available in an SOIC surface-mount package.
The nominal threshold voltage is -2V.
The maximum power dissipation is 2.5W.