| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6675 is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor, designed for load switching and power management applications. It is housed in a compact 8-SOIC surface-mount package.
Key electrical specifications include a drain-source breakdown voltage of -30V and a continuous drain current rating of 11A at 25°C ambient temperature. The device offers a low maximum on-resistance of 14mΩ when driven with a 10V gate-source voltage, and 20mΩ at 4.5V, making it suitable for low-voltage power conversion. The gate threshold voltage ranges from -1V to -2V.
The MOSFET features fast switching with typical turn-on delay of 12ns and turn-off delay of 50ns. Input capacitance is 3000pF at 15V drain-source voltage, and total gate charge is 42nC at 5V. The device can operate over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.12 | $1.12 |
| 10+ | $0.70 | $0.70 |
| 50+ | $0.51 | $0.51 |
| 100+ | $0.46 | $0.46 |
| 500+ | $0.35 | $0.35 |
| 3,000+ | $0.28 | $0.28 |
| 9,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDS6675 is available in an 8-SOIC surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The drain-source breakdown voltage is -30V.
The continuous drain current is 11A at 25°C ambient temperature.
The maximum on-resistance is 14mΩ at Vgs=10V and Id=11A.
The gate threshold voltage ranges from -1V minimum to -2V maximum at Id=-250µA.
The mounting type is surface mount.