| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
126,525 pcs
|
126525 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDS6673BZ-G is a P-Channel PowerTrench MOSFET designed for efficient power management in space-constrained applications. Manufactured by On Semiconductor, this device provides a maximum drain-source voltage of 30V and a continuous drain current of 14.5A at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 7.8mOhm at 14.5A and 10V gate drive, a gate charge of 65nC at 5V, and an input capacitance of 4700pF at 15V. The gate threshold voltage is 3V maximum at 250µA, with a maximum gate-source voltage rating of ±25V. The device is driven with recommended gate voltages of 4.5V (minimum Rds(on)) and 10V (maximum Rds(on)).
Housed in a surface-mount 8-SOIC package (0.154" width, 3.90mm), the FDS6673BZ-G is suitable for high-density PCB layouts. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1W at ambient. This MOSFET is commonly used in load switching, DC-DC converter circuits, and battery protection applications where P-Channel high-side switching is required.
| Qty | Low | High |
|---|---|---|
| 800+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 14.5A at ambient temperature (Ta).
The maximum Rds(on) is 7.8mOhm at Id = 14.5A and Vgs = 10V.
It is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage (Vgs(th)) is 3V at Id = 250µA.